Disco Corporation

Motomi Kitano

Takashi Mori

Kazuya Hirata

Hiroshi Kitamura

Kentaro Iizuka

Naoki Omiya

Yutaka Koma

Takashi Kouda

A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

Wafer producing apparatus

Disclosed is an improved semiconductor wafer grinding apparatus comprising at least wafer holding means and wafer grinding means. The wafer holding means comprises a holder having a wafer-gripping surface for sucking and holding a selected semiconductor wafer and liquid bearing means for rotatably supporting the holder. The liquid bearing means has inclination control means formed therein, and the inclination control means includes discrete inclination controlling areas for suspending the holder at upper and lower levels. Each inclination controlling area has flow rate control means connected thereto. The parallelism of the wafer-gripping surface relative to the wafer grinding means is assured by controlling the flow rate of the liquid to each inclination controlling area.

Semiconductor wafer grinding apparatus

Growing community of inventors

Tokyo, Japan

Motomi Kitano