Shinkawa Ltd.

Motoki Nakazawa

Naoki Sekine

Yasuo Nagashima

Koichi Takahashi

Shinichi Akiyama

Shinichi Sasaki

Yoshihito Hagiwara

Akiko Fujii

Shinji Kumamoto

Yong Du

A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loopbetween a first bonding point and a second bonding point with a bonding tool, and then cutting a portion of a wireextending from a tip of the bonding toolto thereby form a wire tailat the tip of the bonding tool; and a wire tail bending step of bending the wire tailso as to direct a tipof the wire tailupward by descending the bonding tooltoward the second bonding point with the wire loopformed thereat and pressing the wire tailagainst a portion of the wire looplocated above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

Method of manufacturing semiconductor device and wire bonding apparatus

Provided is a wire-bonding apparatus () including: a capillary () through which a wire () inserted; and a controller (). The controller () is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

Wire-bonding apparatus and method of manufacturing semiconductor device

Provided is a wire-bonding apparatusincluding a capillarythrough which a wireis inserted, a nonsticking determination circuit, and a controller. The nonsticking determination circuitapplies a predetermined alternating-current electrical signal between the wire held by the capillary and the bonding target, obtains a capacitance value between the wire held by the capillary and the bonding target, determines that the wire is disconnected from the bonding target when the capacitance value decreases after the first bonding operation, and determines that the disconnected wire drops down and is brought into contact with the bonding target when the capacitance value returns to an original value before reaching the second bonding point.

Wire-bonding apparatus and method of wire bonding

A semiconductor device includes a common wire that sequentially connects three or more pads; bonding portions at which a side surface of the wire is bonded to the pads; and looping portions looped from the bonding portions onto the other pads adjacent to the pads, the bonding portions and the looping portions are formed alternately. When the pads are recessed from the surface of semiconductor chips, the common wire is crushed to a thickness greater than the recess depth of the pads to be made into a flat shape. Thus, on the semiconductor device, wire connection is performed with a smaller bonding count while reducing damage to the semiconductor chips, and at the same time bonding is performed efficiently to the electrodes recessed from the surface of the semiconductor chips.

Method of manufacturing semiconductor device

Provided is a wire-bonding apparatus () including: a capillary () through which a wire () is inserted; a nonsticking determination circuit () configured to apply a predetermined electrical signal between a bonding target and the wire () in a clamped state and to determine whether or not the wire () and the bonding target is sticking as well as whether or not the wire () is disconnected based on a response of the application of the predetermined electrical signal; an annular projecting length detection ring () disposed coaxially with the capillary (); and a projecting length determination circuit () configured to determine whether or not a projecting length of a wire tail projecting from the tip of the capillary () is appropriate based on detection on whether or not power is conductive when a predetermined inspection voltage is applied between the wire () and the projecting length detection ring () as well as a presence of a discharge spark when a predetermined inspection high voltage is applied between the wire () and the projecting length detection ring ().

Provided is a wire bonding apparatus capable of performing high-speed wedge wire bonding, the apparatus including: a bonding tool having a through hole and a pressing surface for pressing a wire; a clamper for holding the wire; and a control unit. The control unit includes: wire tail extension unit that moves the bonding tool, after wedge bonding of the wire to a first lead, upward and along a second straight line connecting a second pad and a second lead, and causes the wire to extend from the through hole in a direction along the second straight line from the second pad to the second lead; and tail cut unit that, after causing the wire tail to extend, cuts the wire tail by moving the bonding tool in the direction along the second straight line connecting the second pad and the second lead while the clamper is closed.

Wire bonding apparatus and bonding method

Provided is a semiconductor die pick-up apparatus including a stage, a suction opening, a cover that opens and closes a suction opening, and projections and primary holes arranged at a circumferential edge of the suction opening and project from a contact surface. When picking up a semiconductor die, in a state in which at least a portion of a contour of the semiconductor die sticks out from the projections toward the outer circumference of the stage, a retaining sheet at the portion sticking out from the primary holes is suctioned, a tip end of the cover is caused to advance upward, the cover is caused to slide while pushing the retaining sheet and the semiconductor die upward to open the suction opening sequentially, the opened suction opening is caused to suction the retaining sheet sequentially to separate the retaining sheet from the semiconductor die.

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Tokyo, Japan

Motoki Nakazawa