Semiconductor Energy Laboratory Co., Ltd.

Motoki Nakashima

Shunpei Yamazaki

Junichi Koezuka

Kenichi Okazaki

Masahiro Takahashi

Mitsuo Mashiyama

Masahiro Watanabe

Tatsuya Honda

Takashi Shimazu

Tetsunori Maruyama

Toshimitsu Obonai

Yuki Imoto

Haruyuki Baba

Hitomi Sato

Yasuharu Hosaka

Masayuki Sakakura

Masami Jintyou

Yukinori Shima

Yasutaka Nakazawa

Hideyuki Kishida

Takuya Hirohashi

Akiharu Miyanaga

Akihisa Shimomura

Noritaka Ishihara

Tomonori Nakayama

Shunsuke Adachi

Masashi Tsubuku

Masashi Oota

Masaki Koyama

Yoichi Kurosawa

Tetsuhiro Tanaka

Junpei Momo

Yuji Iwaki

Daisuke Kurosaki

Yasumasa Yamane

Yuhei Sato

Shinpei Matsuda

Naoki Okuno

Ryosuke Watanabe

Ryo Tokumaru

Tsutomu Murakawa

Hiroshi Kanemura

Kazuki Higashi

Kazuya Sugimoto

A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

Metal oxide and semiconductor device

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Oxide material and semiconductor device

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Manufacturing method of semiconductor device

There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Semiconductor device having specified relative material concentration between In—Ga—Zn—O films

The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device

A document retrieval system retrieving a document with the concept of the document taken into account is provided. The system includes a processing portion and the processing portion creates a retrieval graph from a retrieval composition. The retrieval graph includes first to m-th retrieval local graphs (m is an integer of greater than or equal to 1), and the retrieval local graphs are each constituted by two nodes and one edge. The processing portion performs retrieval of first to m-th sentences on a reference document. The i-th sentence (i is an integer of greater than or equal to 1 and less than or equal to m) includes one of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the one of the two nodes; the other of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the other of the two nodes; and the edge in the i-th retrieval local graph or a related term or a hyponym of the edge. A mark is assigned to the score of the reference document in accordance with the number of sentences included in the reference document among the first to m-th sentences.

Document retrieval system and method for retrieving document

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Semiconductor device

Semiconductor device comprising oxide semiconductor film

Semiconductor device having specified relative material concentration between In&#x2014;Ga&#x2014;Zn&#x2014;O films

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Sputtering target and method for manufacturing the same

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Atsugi, Japan

Motoki Nakashima