Toshiba Memory Corporation

Motoki Nagata

Hitoshi Shiga

Kan Shimizu

Ryuichi Fujimoto

Shigehito Saigusa

Makoto Morimoto

Yumi Takada

According to one embodiment, a semiconductor memory device includes: a word line; a first memory cell; a first circuit; and a second circuit. The first memory cell is connected to the word line. The first circuit generates a first voltage having a waveform including a first time period during which a voltage value increases with time and a second time period during which the voltage value decreases with time, and applies the generated first voltage to the word line. The second circuit measures first time from a first timing when a state of the first memory cell changes according to the first voltage to a second timing when the state of the first memory cell changes according to the first voltage after the first timing. The second circuit determines first data stored in the first memory cell on the basis of the measured first time.

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Yokohama, Japan

Motoki Nagata