Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Motoki Fujii

Fumiki Aiso

Ryota Fujitsuka

Hajime Nagano

Hiroshi Itokawa

Takuo Ohashi

Daisuke Nishida

Hiroshi Kubota

In one embodiment, a semiconductor manufacturing apparatus includes a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance. The apparatus further includes a disposer configured to discard the first gas discharged from the substrate processor. The apparatus further includes a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A substrate treatment apparatus according to an embodiment of the present invention includes a chamber, a stage, a gas discharger, a plasma generator, and a rotation mechanism. The stage supports a semiconductor substrate in the chamber. The gas discharger discharges a film formation gas toward the semiconductor substrate from a position opposing the stage. The plasma generator is provided on the gas discharger and generates plasma in the chamber during discharge of the film formation gas. The rotation mechanism rotates the stage during generation of the plasma.

Substrate treatment apparatus and manufacturing method of a semiconductor device

A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

According to one embodiment, a semiconductor memory device includes a plurality of stacked bodies and a spacer film provided on a side surface of the stacked bodies. Each of the plurality of stacked bodies includes a silicon electrode and a metal electrode stacked on the metal electrode. The plurality of stacked bodies are separated from each other by an air gap. The spacer film includes silicon oxide. A portion of the spacer film disposed on a side surface of the metal electrode is thicker than a portion of the spacer film disposed on a side surface of the silicon electrode.

Growing community of inventors

Yokkaichi, Japan

Motoki Fujii