Kanagawa Academy of Science and Technology

Ricoh Company, Ltd.

Other

The University of Tokyo

Hamamatsu-Photonics K.k.

Riken Corporation

Tokyo Institute of Technology

V Technology Co., Ltd.

Hoden Seimitsu Kako Kenkyusho Co., Ltd.

Motoichi Ohtsu

Motonobu Kourogi

Shuji Mononobe

Takashi Yatsui

Junichi Takahashi

Tadashi Kawazoe

Toshiharu Saiki

Takuya Matsumoto

Yoshihito Narita

Hiroyasu Fujiwara

Masato Takada

Shunsuke Fujita

Uma Maheswari Rajagopalan

Susumu Teruyama

Michinobu Mizumura

Koji Yamamoto

Osamu Saito

Tsutomu Inoue

Toshiyuki Inokuchi

Koichi Kajiyama

Shinichiro Watanabe

Shinya Saito

Keiichi Ito

Izumi Itoh

Tatsuya Miyajima

Masahiko Hara

Taroh Terashi

Song-Ju Kim

Masashi Aono

Shunsuke Yamazaki

Hideho Hisada

Koji Akutsu

Hirokazu Hori

Makoto Naruse

There are provided a quantum dot, a plurality of quantum dots having a larger volume than the quantum dot, a light detection unit for detecting a light emission state of an output light from the plurality of quantum dots, and a light supply unit capable of supplying a control light to the plurality of quantum dots thereby to excite other exciters to a lower level, and controlling energy discharging of the exciters transiting to the lower level, wherein the control light to be supplied by the light supply unit is controlled per quantum dot based on the light emission state of the output light per quantum dot and previously-input search problem information.

Solution searching system by quantum dots

Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substratewhile depositing the compound semiconductor on the substrate, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.

Compound semiconductor deposition method and apparatus

A signal waveform measuring apparatusA is configured from: a signal optical system, a reference optical system, a time difference setting unitsetting a time difference between signal light Land reference light L, a wavelength conversion elementincluding an aggregate of crystals of a dye molecule and generating converted light L, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r&#x3e;1) of the intensity of the incident light, a photodetectordetecting the converted light L, generated at the elementat the intensity that is in accordance with the intensity of the signal light L, the intensity of the reference light L, and the time difference between the two, and a signal waveform analyzerperforming analysis of the detection result of the converted light Land thereby acquiring a time waveform of the signal light L. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.

Signal waveform measuring apparatus and method comprising a wavelength conversion element

A wavelength-converted light generating apparatusA includes: an excitation light sourcesupplying excitation light Lof a predetermined wavelength; and a wavelength conversion element, in which an aggregateof crystals of a dye molecule is held by a holding substrateand which, by incidence of the excitation light L, generates converted light Lthat has been wavelength-converted. The excitation light sourcesupplies the excitation light Lof a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element. The wavelength conversion element, by incidence of the excitation light Lon the crystal aggregate, generates and outputs the converted light (for example, visible light) Lthat has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L. A wavelength-converted light generating apparatus and generating method capable of favorably generating light of a shorter wavelength than incident light of a predetermined wavelength by wavelength conversion is thus realized.

Wavelength-converted light generating apparatus and generating method

An optical detection device image is disclosed that allows fast measurements using near-field light at high resolution and high efficiency but without necessity of position alignment of an optical fiber probe. The optical detection device includes an optical fiber probe having a core for propagating light with an optical probe being formed at a front end of the core; a movement control unit to move the optical fiber probe to approach or depart from a sample; and a detection unit to detect light from the sample surface, wherein on the front end surface of the core of the optical probe, there are a first exit section on a peripheral side for emitting propagating light and a second exit section for seeping out the near-field light, the first exit section and the second exit section are formed in a concentric manner, and the tilt angle of the first exit section is different from the tilt angle of the second exit section.

Optical fiber probe, optical detection device, and optical detection method

The broad range measurement exploiting the usual propagated light and the high resolution measurement mode exploiting near-field light are to be accomplished with a sole as-assembled optical probe. To this end, light radiated through an optical probehaving a light shielding coating layerformed for defining a light radiating aperture D or light radiated at a coreof the optical probeis propagated, as the optical probeis moved in a direction towards and away from a surface for measurement. The core of the optical probe is coated with a light shielding coating layerIn this manner, a spot of propagated light propagated through the coreor a spot of near-field light seeping from the light radiating aperture D is formed on the surface for measurement, and light derived from the spot of light is detected.

Photo-detection device and method

An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

Optical-pickup slide, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof

Method of manufacturing a probe array

In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Near field optical probe having an internal near field generating and detecting device, and manufacturing method thereof

Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof

A probe opening forming apparatus comprising: light detecting means for detecting a quantity of a light transmitted from a tip portion of the probe through a light of the source which is on contact with the tip portion of the probe; storage means for previously storing information about relation of the quantity of the light transmitted from the tip portion of the probe and the size of the opening; calculating means for obtaining the value of the light quantity for obtaining an opening having a desirable size based on the information stored in the storage means and pressing control means for controlling the press of the tip portion of the probe against the light detecting means through the pressing means such that a light quantity detected by the light detecting means is equal to the light quantity calculated from the calculating means

Probe opening forming apparatus and near-field optical microscope using the same

Near field optical probe and manufacturing method thereof

Measurement of an internal structure of a sample is performed using interference of light within a short time. Through a first optical frequency comb generator using a first signal having a frequency f and generating reference light having a sideband every interval of the frequency f and a second optical frequency comb generator using a second signal having a frequency f and generating object light having a sideband every interval of the frequency f , and sweeping of emission timing between the reference light and the object light, by changing a phase difference or frequency difference between the first signal and second signal, and detecting a change in light intensity of the interference light due to the interference, operation of detecting the interference position is made at a high speed.

Interference detecting apparatus and tomography apparatus

In a probe microscope for causing a sample and a tip portion of a probe on the sample side to approach each other, detecting an interaction between the sample and the sample-side probe tip portion , and obtaining surface information of the sample from the interaction, the probe being a flexible needle-like probe; the probe microscope comprises vibrating means capable of rotating the probe while flexing the sample-side tip portion thereof so as to draw a circle having a size corresponding to an increase and decrease in the interaction between the sample surface and the tip portion , and detecting means for detecting the increase and decrease in the size of the circle drawn by the sample-side probe tip portion due to the interaction and obtaining, from the increase and decrease in the size of the circle, information about the distance between the sample and the sample-side probe tip portion

Rotating probe microscope

Optical fiber probe and manufacturing method therefor

Growing community of inventors

Tokyo, Japan

Motoichi Ohtsu