Kokusai Electric Co., Ltd.

Motoichi Kanazawa

Sadayuki Okudaira

Teruo Yoshino

Tokunobu Akao

Hideo Komatsu

Yukio Akita

Kazunori Suzuki

Satohiro Okayama

Tomohiko Takeda

Osamu Matsumoto

Takeshige Ishida

Yasunobu Nakayama

Satoru Ichimura

An unprocessed substrate is conveyed to a film-processing chamber at the same time a processed substrate is conveyed to a substrate preparation chamber, reducing the substrate processing cycle, thereby increasing the yield per unit time. The substrate preparation chamber has a two-tiered structure for receiving processed substrates and unprocessed substrates. A two-tiered transfer robot allows the substrates to be removed or placed into the preparation and process chambers at the same time, thus decreasing the cycle time for processing a substrate.

Substrate processing device, substrate conveying device, and substrate processing method

A plurality of resist membranes are formed on a membrane of goods to be etched. The top resist is patterned by light beam, laser beam, X-rays, or electron beams. The wafer is transferred to a first unit into which discharging gas is introduced and plasma is generated in order to dry-etch the multilayer resists. The multilayer is transferred to a second unit in vacuum environment. In the second unit, the membrane of the wafer is dry-etched in a predetermined depth. The wafer then is transferred to a third unit in vacuum atmosphere so as to remove part of the resist depending a mask pattern and treat the resist by plasma.

Continuous etching process and apparatus therefor

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Tokyo, Japan

Motoichi Kanazawa