Fuji Electric Co., Ltd.

Kojin Co., Ltd.

Motohito Hori

Yoshinari Ikeda

Akira Hirao

Eiji Mochizuki

Akio Toba

Ikuya Sato

Yuji Suzuki

Yoshikazu Takahashi

Tatsuo Nishizawa

Yasuhito Tanaka

Masamichi Iwasaki

Masaaki Ajima

Nobuaki Ohguri

Ryoichi Kato

Hideyo Nakamura

Yoshitaka Nishimura

Masafumi Horio

Kyohei Fukuda

Yuki Inaba

Satoshi Kaneko

Hiromichi Gohara

Takaaki Tanaka

Takafumi Yamada

Tsunehiro Nakajima

Naoyuki Kanai

Katsumi Taniguchi

Yuichiro Hinata

Qichen Wang

Tetsuya Inaba

Michio Tamate

Daisuke Kimijima

Takahiro Mitsumoto

Tetsuya Sunago

Michihiro Inaba

Norihiro Daicho

Mai Saitou

A semiconductor device includes an insulated circuit substrate, a semiconductor chip, a printed circuit board, an interposer, and a sealing member, the interposer including a plurality of post electrodes each having one end bonded to the semiconductor chip via a solder layer, an insulating layer provided to be separately opposed to the semiconductor chip and provided with a first penetration hole filled with part of the solder layer, and a conductor layer provided to be opposed to the printed circuit board and connected to another end of each of the post electrodes via the insulating layer.

Semiconductor device

A semiconductor module includes a conductor layer, an insulating plate, a circuit pattern layer, and semiconductor chips disposed in this order. The conductor layer has a first through hole. The insulating plate has a second through hole having an opening size larger than the first through hole at a location facing the first through hole. The circuit pattern layer has an opening having an opening size larger than the second through hole at a location facing the second through hole. When the semiconductor module is connected to a cooling member, heat transfer medium is disposed between the conductor layer and the cooling member. A screw member is inserted into the opening and second and first through holes and screwed into a screw attachment hole. The screw member presses an area around the first through hole inside the second through hole toward the cooling member.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a first input conductive plate on which a plurality of first semiconductor chips arranged in a first direction, a first output conductive plate extending in the first direction and being provided adjacent to the first input conductive plate, a case having first to fourth side walls for accommodating the first input conductive plate and the first output conductive plate, first main current wiring members, each of which connects one of the first output electrodes to a front surface of the first output conductive plate, a first detection terminal disposed in the first side wall, and a first detection wiring member connecting the front surface of the first output conductive plate to the first detection terminal. The first output conductive plate is disposed closer to the first side wall than is the first input conductive plate.

Semiconductor device and method for determining deterioration of semiconductor device

A semiconductor device includes a semiconductor module that includes: an insulating circuit board, a semiconductor chip provided on a main surface of the insulating circuit board, and an external connection terminals provided on the main surface of the insulating circuit board; an external printed circuit board provided so as to face a main surface of the semiconductor module, the external printed circuit board having a through hole into which the external connection terminal is inserted; and an elastic member provided between the main surface of the semiconductor module and the external printed circuit board so as to apply a pressing force to the main surface of the semiconductor module.

A semiconductor device includes: an insulated circuit substrate including first and second conductive layers on a top surface side; a first semiconductor chip mounted on the first conductive layer; a second semiconductor chip mounted on the second conductive layer; a printed circuit board including a first lower-side wiring layer arranged to be opposed to the first semiconductor chip, and a second lower-side wiring layer arranged to be opposed to the second semiconductor chip, the printed circuit board being provided with a curved part curved toward the insulated circuit substrate; a first connection member arranged to connect the first semiconductor chip with the first lower-side wiring layer; a second connection member arranged to connect the second semiconductor chip with the second lower-side wiring layer; and a third connection member arranged to connect the first conductive layer with the second lower-side wiring layer at the curved part.

Semiconductor device having a curved part in the printed circuit board

A power converter includes a capacitor and a substrate on which a plurality of switching elements for power conversion are mounted. The power converter includes a cooler for cooling the plurality of switching elements and a housing that accommodates the capacitor, the substrate, and the cooler. The power converter includes a power connector exposed from the housing and an output connector exposed from the housing. The power converter includes a plurality of lines that include a plurality of power lines each electrically connected to the capacitor, given switching elements, and the power connector. The plurality of lines include a plurality of output lines each electrically connected to given switching elements and the output connector. At least one among the plurality of lines is a line that includes a conductive pattern formed on the substrate.

Power converter

A power converter includes a positive busbar electrically connected to a positive terminal and the first capacitor electrode, and includes a negative busbar electrically connected to a negative terminal and the second capacitor electrode. The power converter includes output busbars each electrically connected to a given output terminal among multiple output terminals, a given high-side switching element among a plurality of high-side switching elements, and a given low-side switching element among a plurality of low-side switching elements. The power converter includes a cooler that cools the high-side switching elements and the low-side switching elements. The power converter includes a housing that accommodates a supply tube and a discharge tube. The positive terminal, the negative terminal, the output terminals, the inlet port, and the outlet port are exposed on the housing. The inlet port, the outlet port, the supply tube, and the discharge tube are separate members from the housing.

A semiconductor device having a semiconductor module. The semiconductor module includes first and second conductor layers facing each other, a first semiconductor element provided between the first and second conductor layers, positive and negative electrode terminals respectively provided on edge portions of the first and second conductor layers at a first side of the semiconductor module in a top view of the semiconductor module, control wiring that is electrically connected to the first control electrode, and that extends out of the first and second conductor layers at a second side of the semiconductor module that is opposite to the first side in the top view, and a control terminal that is electrically connected to the control wiring, that is positioned outside the first and second conductor layers in the top view, and that has an end portion that is aligned with the positive and negative electrode terminals.

A semiconductor device includes a wiring board that includes a first insulating layer, a first conductive layer arranged over the first insulating layer, a second conductive layer arranged under the first insulating layer, the wiring board further including a magnetic layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher specific magnetic permeability than the first and second conductive layers, and a carbon layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher thermal conductivity in a planary direction than the first and second conductive layers; a semiconductor chip electrically connected to the first and second conductive layers; and an insulating circuit board arranged separately from the wiring board and that has the semiconductor chip mounted thereon.

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof

A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.

Semiconductor module

A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards.

Semiconductor module having an N terminal, A P terminal and an output terminal and method of fabricating the semiconductor module

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

Semiconductor device having circuit board interposed between two conductor layers

A semiconductor device includes circuit substratesandincluding circuit pattern layers, a semiconductor elementmounted to the circuit pattern layer, a connecting pinconnecting the semiconductor elementto the circuit pattern layer, a pin-shaped terminalconnected to the circuit pattern layer, a sealing membersealing the circuit substratesand, the semiconductor element, and the connecting pin, and an external terminalincluding a flat plate portionand an extending portionbent from the flat plate portionand extends away from the circuit substrate, in which the flat plate portionis connected to the pin-shaped terminaland arranged in parallel with the circuit pattern layer, and the extending portionis provided in a range of a width in a transverse direction of the sealing member

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Matsumoto, Japan

Motohito Hori