Hitachi-High-Technologies Corporation

Subaru Corporation

Hitachi High-Tech Corporation

Hitach High-Tech Corporation

Motohiro Tanaka

Masahiro Sumiya

Yasushi Sonoda

Kazue Takahashi

Kohei Sato

Hitoshi Tamura

Motohiko Yoshigai

Naoki Yasui

Koichi Yamamoto

Chihiro Oguro

Kouji Okuda

Kousa Hirota

Takahiro Sakuragi

Tetsuo Kawanabe

A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source.

Plasma processing apparatus

A vehicle driving apparatus includes a friction clutch, a lubricating system, and a control system. The friction clutch is disposed in a power transfer path coupling a power source of a vehicle to drive wheels of the vehicle, and controls a torque distribution ratio between the drive wheels. The lubricating system supplies oil to the friction clutch. The control system executes clutch protection control to suppress an occurrence of a slip state of the friction clutch. The control system executes the clutch protection control when a slip amount of the friction clutch becomes larger than a first threshold while the friction clutch is in a first lubricating state, and executes the clutch protection control when the slip amount of the friction clutch becomes larger than a second threshold while the friction clutch is in a second lubricating state.

Vehicle driving apparatus

In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

A vehicle includes a power source, a requested driving force calculator, and an actual driving force calculator, and a driving controller. The requested driving force calculator calculates a requested driving force on the basis of a driving operation. The actual driving force calculator calculates an actual driving force following the requested driving force, while limiting a rate of change in the actual driving force. The driving controller controls the power source to output the actual driving force calculated. The actual driving force calculator changes the rate of change in the actual driving force, on the basis of a difference between the requested driving force and the actual driving force, and a lapsed time of limiting the rate of change in the actual driving force.

Vehicle

A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.

Plasma processing apparatus and plasma processing method

Gas ring for a plasma processing apparatus

In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.

A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on a surface thereof a film composed of a metal of the same kind as the metal substance, is processed and particles of the metal are deposited on an inner wall of said processing chamber.

A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.

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Tokyo, Japan

Motohiro Tanaka