Casio Computer Co., Ltd.

Kochi Industrial Promotion Center

Motohiko Yoshida

Hiromitsu Ishii

Hitoshi Hokari

Ikuhiro Yamaguchi

Tokiyoshi Matsuda

Takashi Hirao

Takahiro Hiramatsu

Mamoru Furuta

Hiroshi Furuta

Makoto Sasaki

Manabu Takei

An electrophoretic display device includes: a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval; a plurality of pixel electrodes which are aligned on the first substrate; a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes; an opposite electrode which is provided on the second substrate; a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; and a solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed. The partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides.

Electrophoretic display device

A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Manufacturing method of thin film transistor including low resistance conductive thin films

A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

Thin film transistor panel

A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Thin film transistor including low resistance conductive thin films and manufacturing method thereof

A thin film transistor of the present invention includes a semiconductor thin film (); a gate insulating film () formed on one surface of the semiconductor thin film (); a gate electrode () formed to be opposite to the semiconductor thin film () through the gate insulating film (); a source electrode () and a drain electrode () electrically connected to the semiconductor thin film (); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film () formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (), and having a contact hole () through which at least a part of each of the source region and the drain region is exposed wherein the source electrode () and the drain electrode () are connected to the semiconductor thin film () through the contact hole ().

Growing community of inventors

Hamura, Japan

Motohiko Yoshida