Disco Corporation

Toyo Seikan Group Holdings, Ltd.

Motohiko Shimada

Hiroshi Morikazu

Masaru Yamaguchi

Yutaka Asano

Toshifusa Azuma

Shigenori Ueda

A cup-type container obtained by compression-forming a thermoplastic resin and including at least a flange portion, a body portion and a bottom portion, wherein a ratio (L/D) of the height of the container to the diameter of the opening is not less than 1.0, and if the direction of height of a test piece cut out from the body portion of the container is denoted by x and the circumferential direction thereof by y, a half-value width P at a half peak of a Miller index at a diffraction angle 2&#x3b8;=14.5&#xb0; that represents the diffraction by the crystal plane (110), is in a range of 1.25 to 1.5 over the whole body portion in a peak intensity profile in the direction of height (x-direction) of a Debye's ring obtained by measuring the diffraction intensities by causing the X-rays to be incident on an x-y plane of the test piece at right angles thereto. The cup-type container is evenly oriented in the direction of height of the container and in the circumferential direction thereof, has an even strength in all directions and has excellent heat resistance. The invention, further, provides a method of forming the cup-type container.

Cup-type container and method of forming the same

A wafer is formed with a plurality of division lines on a front surface of a single crystal substrate having an off angle and formed with devices in a plurality of regions partitioned by the division lines. The wafer is processed by setting a numerical aperture (NA) of a focusing lens for focusing a pulsed laser beam so that a value obtained by dividing the numerical aperture (NA) by a refractive index (N) of the single crystal substrate falls within the range from 0.05 to 0.2. The pulsed laser beam is applied along the division lines, with a focal point of the pulsed laser beam positioned at a desired position from a back surface of the single crystal substrate, so as to form shield tunnels each composed of a pore and a pore-shielding amorphous portion along the division lines from the focal point positioned inside the single crystal substrate.

Wafer processing method using pulsed laser beam to form shield tunnels along division lines of a semiconductor wafer

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Tokyo, Japan

Motohiko Shimada