Toshiba Memory Corporation

Motohiko Fujimatsu

Nobuyuki Momo

Fumitaka Arai

Keiji Hosotani

Keisuke Nakatsuka

Akira Hokazono

Yusuke Arayashiki

According to one embodiment, a semiconductor memory device includes: a first semiconductor layer including first to third portions which are arranged along a first direction and differ in position from one another in a second direction; a conductive layer including a fourth portion extending in the second direction and a fifth portion extending in the first direction; a first insulating layer between the fourth portion and the first semiconductor layer and between the fifth portion and the first semiconductor layer; a first contact plug coupled to the fourth portion; a second contact plug coupled to the first semiconductor layer in a region where the first insulating layer is formed; a first interconnect; and a first memory cell apart from the fifth portion in the first direction and storing information between the semiconductor layer and the first interconnect.

Semiconductor memory device having a memory cell and semiconductor layer

A storage device includes: a substrate; a first conductive layer extending in a first direction; a second conductive layer adjacent to the first conductive layer in a second direction, and extending in the first direction; a third conductive layer extending in a third direction; a fourth conductive layer extending in the second direction; a fifth conductive layer disposed on the second conductive layer, extending in the third direction, and being electrically connected to the fourth conductive layer; a first storage layer disposed between the third conductive layer and the fourth conductive layer; a first semiconductor layer disposed between the first conductive layer and the third conductive layer; a second semiconductor layer disposed between the second conductive layer and the fifth conductive layer; and a first gate electrode extending in the second direction and being shared by side surfaces of the first semiconductor layer and the second semiconductor layer.

Storage device

Growing community of inventors

Kanagawa, Japan

Motohiko Fujimatsu