Kabushiki Kaisha Toyota Chuo Kenkyusho

Motofumi Suzuki

Yasunori Taga

Kazuyoshi Tomita

Takeshi Ohwaki

Yuichi Tanaka

Hiroshi Tadano

Tadayoshi Ito

Tadayoshi Itoh

Testu Kachi

A birefringent plate includes a transparent glass substrate, an antireflection coating formed on one of the surfaces of the glass substrate, an obliquely deposited film formed on the other one of the surfaces of the glass substrate by obliquely deposition of a dielectric material with respect to the normal of the glass substrate, and a protective film formed on the obliquely deposited film for holding the occluded water of the obliquely deposited film within the obliquely deposited film and reducing the light interference between the opposite surface of the glass substrate and the surface of the obliquely deposited film. The antireflection coating and the protective film inhibit the phase difference from fluctuating at different measurement positions when the phase difference is measured by using a light source, such as a laser beam. In addition, the protective film makes the birefringent plate less dependent on the temperature.

Birefringent plate

A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out. Also, through uniform radiation of circular polarized light onto the GaAs substrate and application of a relatively low voltage, tunneling current is caused to flow between the tip and the substrate, which tunneling current changes in accordance with the magnetization orientation of molecules of the photoinductive ferromagnetic thin film. Through detection of the tunneling current, the magnetization orientation of molecules of the photoinductive ferromagnetic thin film can be detected.

Ultra-high density memory device

An inorganic thin film polarizer having polarization characteristics comprises: a matrix for thin film polarizer composed of fine columns thereof arranged on a substrate; and light absorbing portions provided on the columns. The columns are made of inorganic substance which is transparent in the desired wavelength region of light such as the visible light region, ultraviolet region and infrared region, and each column has a substantially circular cross section. The columns are tilted at a constant angle with respect to a surface normal of the substrate and has anisotropy in density. The light absorbing portions have a light extinction coefficient larger than that of the columns at the desired wavelength region of light. The columns are arranged at a spacing of from 0.2 to 20 times the diameter of the column.

Inorganic thin film polarizer

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Aichi, Japan

Motofumi Suzuki