Sumco Techxiv Kabushiki Kaisha

Motoaki Yoshinaga

Masahiro Shibata

Yutaka Shiraishi

A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (A) to the top of the straight cylinder portion (B), the silicon single crystal () is pulled under conditions that the oxygen concentration Oi from the shoulder (A) to the top of the straight cylinder portion (B) of the silicon single crystal () is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0&#xd7;10atoms/cm.

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Kanagawa, Japan

Motoaki Yoshinaga