Sony Corporation

Motoaki Abe

Teruaki Aoki

Tadakuni Narabu

Yasuhito Maki

Hideo Nomura

Hiroyuki Matsumoto

Takeshi Matsushita

Tadayoshi Mifune

Tetsuo Ando

A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.

Linear sensor having a plurality of sensor rows

Linear imaging sensor having improved charged transfer circuitry

In a charge transfer device in which a plurality of electrodes are located on an insulating layer formed on a semiconductor substrate and an input portion and a transfer portion are provided, a predetermined amount of charge determined by a potential applied to the input portion is introduced into the portion beneath a predetermined electrode while driving an electrode on the transfer portion, such a potential is applied to all of the plurality of electrodes that surface areas of the substrate beneath the electrodes each become an accumulation state to thereby inject the predetermined amount of charge into the substrate, and a potential is applied to the electrodes after a predetermined period of time to partially catch injected charge beneath the electrodes and to use caught charge as a bias charge. A solid state image pick-up apparatus is also disclosed which includes the above-mentioned charge transfer device and carries out their operation in the vertical blanking period.

Charge transfer device imager with bias charge

A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.

Method for manufacture of a semiconductor device

Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.

Method of manufacturing a semi-insulating silicon layer

A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.

Growing community of inventors

Shizuoka, Japan

Motoaki Abe