Qualcomm Incorporated

Moto Oishi

Inyup Kang

Tao Li

Jian Wei

Richard Higgins

Bruce R Meagher

Julio Arceo

Brian Rodrigues

Jalal Husseini

Memory architectures and techniques that support direct memory swapping between NAND Flash and SRAM with error correction coding (ECC). In a specific design, a memory architecture includes a first storage unit (e.g., an SRAM) operative to provide storage of data, a second storage unit (e.g., a NAND Flash) operative to provide (mass) storage of data, an EMI unit implemented within an ASIC and operative to provide control signals for the storage units, and a data bus coupled to both storage units and the EMI unit. The two storage units are implemented external to the ASIC, and each storage unit is operable to store data from the other storage unit via the data bus when the other storage unit is being accessed by the EMI unit. The EMI unit may include an ECC unit operative to perform block coding of data transferred to/from the second storage unit.

Direct memory swapping between NAND flash and SRAM with error correction coding

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San Diego, CA, United States of America

Moto Oishi