Technion Research & Development Foundation Ltd

Moshe Weinstein

Yael Nemirovsky

Sara Stolyarova

Avi Shai

Yehuda Sinai

A CdZnS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The CdZnS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The CdZnS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.

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Mevaseret, Israel

Moshe Weinstein