Applied Materials, Inc.

Ls Biopath, Inc.

Kla-Tencor Technologies Corporation

Other

Moshe Sarfaty

Dimitris Lymberopoulos

Jed Davidow

Amir Lev

Lalitha S Balasubramhanya

Jaim Nulman

Arulkumar P Shanmugasundram

Alexander T Schwarm

Jehuda Hartman

Yuri Kokotov

Yossi Fisher

Jacques Seror

Hakeem M Oluseyi

Efim Entin

Ramaswamy Sreenivasan

Bok Hoen Kim

Ying Gao

Thomas E Nowak

Tsutomu Tanaka

Andreas Goebel

Martin Jay Seamons

Sebastien Raoux

Suraj Rengarajan

Michael P Nault

Kevin H Song

Michael J Wood

Alexander Viktorovich Garachtchenko

Haojiang Li

Nam Le

Ameeta Madhava

Sven Hermann

Yuval Ben-Dov

An optical system and apparatus for the diagnosis of a biological sample is disclosed. An embodiment of the apparatus includes an optical probe, a probe head distally connectable to the optical probe, the optical probe further comprising at least one optical element for applying an electromagnetic radiation of a first wavelength to the biological sample, and one or more collection elements positioned proximate the at least one optical element; and an analyzer for analyzing a signal received from the biological sample by the one or more collection elements.

Optical system for detection and characterization of abnormal tissue and cells

Methods for optical identification and characterization of abnormal tissue and cells

An apparatus for the diagnosis of a biological sample is disclosed. An embodiments of the apparatus includes a probe, a probe head distally connectable to the probe, the probe head further comprising a plurality of electrode elements thereby forming an electrode array where each electrode element is variably actuatable to apply an electrical signal to the biological sample; an RF signal source for applying the electrical signal to the electrode array; an electrode selector adapted and configured to switch the electrical signal from the RF signal source between the plurality of electrode elements; and a detection circuit for analyzing a dielectric property received from the biological sample. Methods and kits for diagnosing a biological sample are also disclosed.

Methods for detection and characterization of abnormal tissue and cells using an electrical system

Electrical methods for detection and characterization of abnormal tissue and cells

Electrical systems for detection and characterization of abnormal tissue and cells

A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Method, system and medium for controlling manufacturing process using adaptive models based on empirical data

The material composition of a thin film formed on a substrate or covered by a cap layer that shares one or more elements with the thin film can be determined by combining characteristic material data, such as characteristic x-ray data, from a material composition analysis tool, such as an electron probe-based x-ray metrology (EPMA) operation, with thickness data and (optionally) possible material phases for the thin film. The thickness data and/or the material phase options can be used to determine, for example, the penetration depth of a probe e-beam of the EPMA tool. Based on the penetration depth and the thin film thickness, the characteristic x-ray data from the EPMA operation can be analyzed to determine the composition (e.g., phase or elemental composition) of the thin film. An EPMA tool can include ellipsometry capabilities for all-in-one thickness and composition determination.

Material composition analysis system and method

A method of measuring a lower similar layer that is separated from an upper similar layer by an intervening dissimilar layer in an integrated circuit. A first electron beam having a first relatively lower landing energy is directed at the integrated circuit. The first relatively lower landing energy is sufficient to completely penetrate the upper similar layer and insufficient to completely penetrate the intervening dissimilar layer, thereby producing first readings that are characteristic of the upper similar layer. A second electron beam having a second relatively higher landing energy is directed at the integrated circuit, the second relatively higher landing energy is sufficient to completely penetrate the upper similar layer, the intervening dissimilar layer, and the lower similar layer, thereby producing second readings that are characteristic of both the upper similar layer and the lower similar layer. The first readings that are characteristic of the upper similar layer are subtracted from the second readings that are characteristic of both the upper similar layer and the lower similar layer, to produce third readings that are characteristic of only the lower similar layer.

Direct non contact measurement

A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio frequency generator and induces eddy currents in the conducting film which are sensed using a detector. The conducting film is illuminated by a first optical fiber, and light which is reflected from the conducting film is transmitted by a second optical fiber to a detector. The combined use of electrical and optical reflectance signals provides a single probe unit that measures both dielectric and conducting transparent and semi-transparent films.

Eddy-optic sensor for object inspection

Embodiments of the invention provide an apparatus and method to determine the health of a substrate process such as, for example, a pre-clean process using plasma to remove copper oxide from a copper layer on a substrate, and the point at which the process has ended. In one aspect, optical characteristics and/or chamber impedance are used to determine the process end-point and/or process chamber health.

Method and apparatus for process monitoring

A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.

Method and apparatus for monitoring a process by employing principal component analysis

A method and system using spectral interference of light from plasma emissions collected at near grazing incidence to in-situ monitor and control the film thickness of a non-opaque film. Embodiments of this invention are particularly useful to all substrate processing chambers equipped to form an in-situ plasma within the chamber and which are used to deposit or etch non-opaque films. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to deposit a non-opaque film on a wafer substrate within the chamber. During the plasma deposition process, a plurality of wavelengths of radiation including those reflected from the top and bottom layer of the film being deposited upon a wafer surface are collected through an existing viewport, and conveyed to a spectrometer for measurements via an optical fiber attached near this viewport. These measurements are analyzed to determine the film's thickness. An alternate embodiment of the method of the present invention uses an interference filter to confine the spectral composition of the plasma emissions to an emission at a narrow wavelength interval and a photodiode to detect the intensity of the emission.

In-situ film thickness measurement using spectral interference at grazing incidence

A method for detecting current leakage of a film on a substrate. The film is repeatedly irradiated with an electron beam, thereby causing the film to emit x-rays. The emitted x-rays are detected with an x-ray detector, the detected x-rays emitted with each repeated irradiation of the film are counted to produce an x-ray count rate. The trend of the x-ray count rate is determined, and the current leakage of the film is determined from the trend of the x-ray count rate.

Current leakage measurement

In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber

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Cupertino, CA, United States of America

Moshe Sarfaty