E.i. Dupont De Nemours and Company

Gte Laboratories Incorporated

Moshe Oren

Daniel B Laubacher

Michael Patrick Chouinard

Edward P Gargiulo

James L Hohman, Jr

Joseph Anthony Perrotto

Ronald Jack Riegert

James Francis Ryley, Jr

A N Choudhury

Jiunn-You Liou

O Robert Averitt

Victoria Guerra-Brady

Jiunn-Yau Liou

Patrick H Wyant

Francisco C Prince

A waveguide sensing element has a substrate having an input opening adapted to house an input optical fiber and an output opening adapted to house an output optical fiber. The input optical fiber transmits electromagnetic radiation, and the output optical fiber emits the electromagnetic radiation. The waveguide sensing element also has a guiding layer disposed adjacent the substrate. The guiding layer has a beveled end face. The angle of the bevel is chosen so that the guiding layer selects only those modes within a given range--i.e., high order modes. This increases the spectral absorption measurement sensitivity as compared to a waveguide sensing element which uses the complete mode spectrum. Such a highly sensitive waveguide sensing element has been found to be particularly useful as an internal reflection spectroscopic sensing element. Moreover, the waveguide sensing element of the present invention is particularly useful in a process environment, where the corrosive effects of chemicals make on-line spectral absorption measurements difficult. Thus, the waveguide sensing element of the present invention may be rear-fired, which is particularly attractive from a process seal integrity standpoint.

Waveguide sensing element for use in a sample medium and method of

Waveguide structure using potassium titanyl phosphate

An electro-optic waveguide structure having a single mode channeled waveguide pattern of the Mach-Zehnder configuration is formed in a substrate of potassium titanyl phosphate.

Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize zinc whereby zinc diffuses into the gallium arsenide or aluminum gallium arsenide wafer without eroding the surface.

Method of diffusing zinc into III-V compound semiconductor material

Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize sulfur while the gallium arsenide and gallium sulfide are in thermodynamic equilibrium whereby sulfur diffuses into the gallium arsenide wafer without eroding the surface.

Method of diffusing conductivity type imparting material into III-V

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Wilmington, DE, United States of America

Moshe Oren