Apple Inc.

Moshe Neerman

Naftali Sommer

Ofir Shalvi

Avraham Poza Meir

Uri Perlmutter

Julian Vlaiko

Eyal Gurgi

Yael Shur

Yoav Kasorla

Oren Golov

Shai Ojalvo

Etai Zaltsman

Meir Dalal

Micha Anholt

Ariel Maislos

Barak Baum

Assaf Shappir

Moti Teitel

Yair Schwartz

Ofer Shapira

A method for data storage includes storing data in a memory that includes one or more memory units, each memory unit including memory blocks. The stored data is compacted by copying at least a portion of the data from a first memory block to a second memory block, and subsequently erasing the first memory block. Upon detecting a failure in the second memory block after copying the portion of the data and before erasure of the first memory block, the portion of the data is recovered by reading the portion from the first memory block.

Redundant data storage schemes for multi-die memory systems

A memory system includes an interface and storage circuitry. The interface is configured to communicate with memory cells that store data. The storage circuitry is configured to program a data unit to a first group of the memory cells, to read the data unit from the first group using at least a read threshold to produce a first readout, and in response to detecting that reading the data unit has failed because the read threshold has fallen outside a supported range of read thresholds, due to a temperature difference between a time of programming the first group and a time of reading the first group, to program a second group of the memory cells. The circuitry is further configured to re-read the data unit from the first group using the at least read threshold to produce a second readout, and to recover the data unit from the second readout.

Recovery from cross-temperature read failures by programming neighbor word lines

A method for data storage includes reading from a memory device data that is stored in a group of memory cells as respective analog values, and classifying readout errors in the read data into at least first and second different types, depending on zones in which the analog values fall. A memory quality that emphasizes the readout errors of the second type is assigned to the group of the memory cells, based on evaluated numbers of the readout errors of the first and second types.

Estimating flash quality using selective error emphasis

A method includes, in a host that stores data in a storage device, detecting an event that is indicative, statistically and not deterministically, of an imminent power shutdown in the host. A notification is sent to the storage device responsively to the detected event, so as to cause the storage device to initiate preparatory action for the imminent power shutdown.

Power shutdown prediction for non-volatile storage devices

A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Mitigating reliability degradation of analog memory cells during long static and erased state retention

A data storage method includes identifying, in a set of data items associated with respective logical addresses for storage in a memory, a first subset of the logical addresses associated with the data items containing application data, and a second subset of the logical addresses associated with the data items containing parity information that has been calculated over the application data. The data items associated with the first identified subset are stored in one or more first physical memory areas of the memory, and the data items associated with the second identified subset are stored in one or more second physical memory areas of the memory, different from the first physical memory areas. A memory management task is performed independently in the first physical memory areas and in the second physical memory areas.

Independent management of data and parity logical block addresses

A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page.

Threshold adjustment using data value balancing in analog memory device

A method for data storage includes, in a memory that includes at least N memory units, each memory unit including memory blocks, defining superblocks, each superblock including a respective set of N of the memory blocks that are allocated respectively in N different ones of the memory units, such that compaction of all the memory blocks in a given superblock is performed without any intervening programming operation in the given superblock. Data is stored in the memory by computing redundancy information for a selected portion of the data, and storing the selected portion and the redundancy information in the N memory blocks of a selected superblock.

Growing community of inventors

Hadera, Israel

Moshe Neerman