International Business Machines Corporation

Morton D Reeber

Lawrence V Gregor

Joseph F Fugardi

Peter S Grosewald

Charles Carpenter

William E Dougherty, Jr

Rudolf G Frieser

Donald L Klein

Thomas F Redmond

A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:

Method of forming a solder interconnection capable of sustained high

The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially forming lattice defects on the backside surface of the device by sandblasting and subsequently etching the damaged surface to remove the lattice defects and thereby produce an intricate surface morphology which provides nucleate boiling sites.

Nucleate boiling surface for increasing the heat transfer from a silicon

A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:

Improved solder interconnection between a semiconductor device and a

A device for removing contaminant impurities, particularly contaminants existing at very low levels, from a liquid, including a heating element at least partially immersible in the liquid, a confinement means at least partially immersible in the liquid for maintaining a pulsating bubble of vapor of the liquid, the heating element located within the confining means, openings in the confining means to allow periodic partial escape of the vapor bubble and ingress of liquid.

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Shrub Oak, NY, United States of America

Morton D Reeber