Other

Morteza Monavarian

Saadat Mishkat-Ul-Masabih

Daniel F Feezell

Andrew A Allerman

Mary H Crawford

Andrew Armstrong

Andrew Aragon

Tito Busani

Mahmoud Behzadirad

Arash Mafi

Daniel Feezell

Behnam Abaie

Saadat M Mishkat-Ul-Masabih

An electrically injected vertical-cavity surface emitting laser (VCSEL) and a method of manufacturing the same is disclosed. The electrically injected VCSEL includes a non-c-plane substrate and a nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate.

Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

Devices comprising distributed bragg reflectors and methods of making the devices

A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.

Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching

A method of forming and a random Distributed Bragg Reflector (DBR) is disclosed. The random DBR includes a substrate and a plurality of alternating layers of lattice-matched nanoporous GaN (NP-GaN) and GaN formed on a top surface of the substrate, wherein at least one of the alternating layers has a thickness of &#x3bb;/4n and an adjacent one of the alternating layers does not have a thickness of &#x3bb;/4n, wherein &#x3bb; is a wavelength of incident radiation and n is the refractive index of a particular layer of the plurality of alternating layers.

Method of fabricating broad-band lattice-matched omnidirectional distributed Bragg reflectors using random nanoporous structures

Growing community of inventors

Albuquerque, NM, United States of America

Morteza Monavarian