International Business Machines Corporation

Morris Anschel

Bahgat Ghaleb Sammakia

Voya Rista Markovich

Mark Vincent Pierson

Anthony P Ingraham

Michael D Lowell

Walter P Pawlowski

Scott D Reynolds

Timothy Shawn Reny

Richard Gerald Murphy

Wayne R Storr

Charles Robert Lamb

Carl P Hayunga

Stephen Anthony Shear

Wolfgang Mayr

Douglas W Ormond

Carmelo F Aliotta

Barton M Hetrick

Lawrence D Goodrich

Tamar A Powers

A metallization layer is formed on a substrate with improved adhesion thereto by performing the deposition at an elevated temperature which favors the formation of chemical bonds of the metal to the substrate as well as clusters of metal embedded within the substrate and contiguous with the metallization layer. In polymer substrates the chemical bond is made to carbonyl functional groups such as ketones or aldehydes. The adhesion is enhanced by the removal of moisture from the surface of the substrate at the elevated temperatures employed. A high degree of adhesion is also obtained through the deposition of a mixture of metals including chromium and copper which initially has a high chromium to copper ratio which is decreased during the deposition process. Completion of the process is determined by the reaching of a final desired chromium to copper ratio as observed by optical emission spectroscopy. The process can be carried out on a continuous basis by the use of a multi-chamber vacuum sputtering system.

Thin film metallization process for improved metal to substrate adhesion

A method of testing semi-conductor chips is disclosed. The individual semiconductor chips have I/O, power, and ground contacts. In the method of the invention a chip test fixture system is provided. The chip test fixture system has contacts corresponding to the contacts on the semiconductor chip. The carrier contacts have dendritic surfaces. The chip contacts are brought into electrically conductive contact with the conductor pads on the chip test fixture system. Test signal input vectors are applied to the inputs of the semiconductor chip, and output signal vectors are recovered from the semiconductor chip. After testing the chip is removed from the substrate.

Method and apparatus for testing of integrated circuit chips

A metallic layer is coated onto a substrate by sputtering a layer of chromium followed by a layer of copper whereby the temperature of the substrate is at least about 320.degree. C.

Process for coating a substrate with metallic layer

The adhesion between a polyimide layer and a metal is improved by providing a layer of a metal benzotriazole on a polyamic acid layer wherein the metal is copper, silver, or gold. A layer of metal is then provided on the metal benzotriazole layer.

Method for improving adhesion between a polyimide layer and a metal and

A process is provided for improving the surface properties of polyimide articles which contain significant amounts of transimide. The surface of the polyimide containing the transimide is first treated with a base to convert the surface layer of both the polyimides and the transimides to polyamic salt. Thereafter the surface layer of the converted polyamic salt is treated with an acid to convert the layer to a polyamic acid. This is followed by a cure preferably in infrared radiation at a sufficiently rapid rate to prevent the formation of any significant amounts of transimide and provide only polyimide. Following this treatment metallization is applied to the improved surface layer.

Process for treating the surface of polyimides to improve properties to

An electronic package (10) including a first circuitized substrate 11 (e.g., printed circuit board) having connected thereto a second, flexible circuitized substrate (e.g., polyimide with chrome-copper-chrome circuitry thereon). The second substrate is in turn electrically connected to the invention's semiconductor device (e.g., silicon chip), which device in turn is attached to a heat spreader (37) for providing effective heat transference from the device to the package's heat sink (33). The heat sink is attached to the first substrate (e.g., using solder). Significantly, the coefficients of thermal expansion of the heat spreader, semiconductor device and adhesive used to connect same are substantially similar, around 2 to 5 ppm/degree Kelvin (.times.10.sup.-6 m/m degrees Kelvin), in order to provide an effective heat path from the heat-generating device to the corresponding, much larger heat sink.

Electronic package with heat spreader member

A process is provided for developing images in exposed negative photoresists which comprises treating a substrate coated with the photoresist with a mixture of trichloroethane and from about 5 weight % to about 17 weight % of an aliphatic alcohol, preferably isopropanol or tert-butanol, which is heated to an elevated temperature. The alcohol is present in an amount up to that forming a constant boiling composition (azeotropic compositions).

Method for developing negative photoresists

A resolution standard for a scanning electron microscope has clusters of palladium in a sea urchin form. The clusters are widely scattered on a substrate so that a cluster can be acquired easily for a resolution test. The tips of the spines on the clusters are on the order of 50 Angstroms and they present a sharp clear image to an electron microscope that is operating properly. A process for forming the clusters is also disclosed.

Resolution standard for scanning electron microscope comprising

A catalyst solution for making surfaces receptive to the deposition of adherent electroless metal layers includes a complex of a precious metal salt with dimethyl sulfoxide such as, for example, Pd Cl.sub.2 . 2(CH.sub.3).sub.2 SO together with a group IV metal salt such as, for example, stannous chloride. A process for rendering surfaces, such as glass, receptive to adherent electroless metal layers using the catalyst solution is also provided.

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Binghamton, NY, United States of America

Morris Anschel