Kobelco Research Institute, Inc.

Moriyoshi Kanamaru

Yuki Tao

Akira Nambu

Yuichi Taketomi

Hiroshi Goto

Hideo Hata

Yuki Iwasaki

Minoru Matsui

Shintaro Yoshida

An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 &#x3bc;m. X-ray diffraction of the oxide sintered body shows that a ZnSnOphase and an InGaZnOphase are the main phases and that an InGaZnOphase is contained in an amount of 3 volume % or less.

Oxide sintered body and sputtering target, and method for producing same

Provided is a sintered body comprising LiCoOused for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cmand the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0&#xd7;10&#x3a9;-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Sintered body comprising LiCoO2, sputtering target, and production method for sintered body comprising LiCoO2

An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by X&#x2022;ray diffractometry: (1) (ZnSnOphase+InGaZnOphase)/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InO, phase)&#x2267;75% by volume; (2) ZnSnOphase/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InOphase)&#x2267;30% by volume; and (3) InGaZnOphase/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InOphase)&#x2267;10% by volume, and m represents an integer of 2 to 5.

Oxide sintered body and sputtering target

Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 &#x3bc;m or larger within a 1 mmcross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 &#x3bc;m and a relative density of at least 85%.

Li-containing phosphoric-acid compound sintered body and sputtering target, and method for manufacturing said Li-containing phosphoric-acid compound sintered body

Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Li-containing oxide target assembly

Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]&#xd7;100&#x2267;70. In equation (1), A represents the XRD peak intensity in the vicinity of 2&#x3b8;=34&#xb0;, B represents the XRD peak intensity in the vicinity of 2&#x3b8;=31&#xb0;, C represents the XRD peak intensity in the vicinity of 2&#x3b8;=35&#xb0;, and D represents the XRD peak intensity in the vicinity of 2&#x3b8;=26.5&#xb0;.

Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

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Takasago, Japan

Moriyoshi Kanamaru