Fujitsu Corporation

Chiyoda Corporation

Other

Mitsubishi Heavy Industries Limited

Osaka Gas Company Limited

Nippon Yusen Kabushiki Kaisha

Moritaka Nakamura

Takashi Kurimoto

Osamu Yamamoto

Yoshitsugi Kikkawa

Katsuhiko Iizuka

Hiroshi Yasuda

Yasushi Takahashi

Kiichi Sakamoto

Yoshihisa Oae

Takamasa Satoh

Soichiro Arai

Yoshikazu Yamaoka

Norio Hatanaka

Shigeru Sugiyama

Masaru Oka

Junichi Sakaguchi

Toshikazu Irie

Takashi Mihashi

Yasuharu Fukuda

Eiji Tominaga

Kazuhiko Ohtake

Motohiro Omori

An apparatus for controlling the pressure in a cargo tanksupplies BOG generated from liquefied natural gas stored in the cargo tankto a burning systemthrough a compressor. In this apparatus, a reliquefaction plantis disposed on the downstream side of first and second compressorsandand on the upstream side of the cargo tankso that BOG discharged from the second compressoris liquefied by the reliquefaction plantand the liquefied fluid is returned again into the cargo tank

Device and method for pressure control of cargo tank of liquefied natural gas carrier

Method of fabricating semiconductor device having low dielectric constant insulator film

An interconnection pattern made of an aluminum alloy, such as Al&mdash;Cu, on a semiconductor IC, is dry etched in an etching gas containing a chlorine component. A photo resist stripping process is carried out at a location down stream of the etching process using a conventional stripping gas, such as CF &plus;0 , at room temperature. Before the resist-stripped substrate is exposed to open air, the substrate is heated in a vacuum to a temperature above 100&deg; C., to remove residual chlorine components.

Method for stripping a photo resist on an aluminum alloy

An interconnection pattern made of aluminum alloy, such as Al-Cu, on a semiconductor IC, is dry etched in an etching gas containing a chlorine component. Residual chlorine components on the substrate are difficult to remove, thus causing corrosion problems with respect to the patterned aluminum alloy layer. Accordingly, to prevent such corrosion, a photo resist stripping process is carried out at a location down stream of the etching process using a conventional stripping gas, such as CF,&plus;O,, at room temperature. Next, and before the resist-stripped substrate is exposed to open air, the substrate is heated in a vacuum to a temperature above 100&deg; C., to thus remove residual chlorine components. In an alternative method, the heating process is carried out concurrently with the resist stripping process.

Provided is a method for liquefying natural gas which can be applied to LNG plants of a wide range of capacity and can produce LNG both efficiently and economically. Feed gas of natural gas or a non-liquefied component of recycle gas which is produced during a process of liquefying natural gas is liquefied by using a first refrigerant, for instant consisting of a C3 refrigerant, and a second refrigerant which is different from the first refrigerant, for instance consisting of a C2 refrigerant, in a stepwise fashion. The flow is then liquefied by a substantially isentropic expansion process. The non-liquefied component remaining from this expansion process is then pressurized by a compressor, and combined with the non-liquefied component of the natural gas for recycling the combined flow. The compressor is driven by power obtained from the substantially isentropic expansion process.

Method for liquefying natural gas

Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control in attaining vertical etching or taper etching with a desired taper angle by controlling the temperature of a mass to be etched, which mass is usually a semiconductor wafer.

Method of dry etching with hydrogen bromide or bromide

In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

Charged particle beam exposure apparatus and method of cleaning the same

Provided is a method for liquefying natural gas which can be readily adapted to LNG plants of all sizes without requiring expensive and special heat exchangers. The liquefaction of feed gas of natural gas and recycle natural gas is carried out with a single-component refrigerant or a mixed refrigerant in a high temperature stage, and with a substantially isentropic expansion in a low temperature stage, and a non-liquefied part of the recycle gas after the expansion step is pressurized with a compressor and recycled along with a recycle stream of non-liquefied par of the feed natural gas, the liquefied part by the refrigerant exchanging heat with the non-liquefied part stream produced from the substantially isentropic expansion, in a plate-fin heat exchanger or the like. The compressor is driven by the power obtained by the substantially isentropic expansion.

Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control of attaining vertical etching or taper etching with a desired taper angle by controlling a temperature of a mass to be etched, which mass is a phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline or phosphorus-doped silicides semiconductor wafer.

Dry etching with hydrogen bromide or bromine

A method of reactive ion etching (RIE) of aluminum or an alloy thereof (Al) in which a substrate with an Al layer coated thereon is maintained at a temperature of 60.degree. C. or less by cooling the substrate, so that the Al layer is taperingly etched to form conductor lines having sloped sidewalls. The substrate is clamped to a cooled electrode stage by an electrostatic chuck.

Method of dry etching aluminum

Growing community of inventors

Yokohama, Japan

Moritaka Nakamura