Ngk Insulators, Inc.

Nichiha Corp.

Nichiha Co., Ltd.

Nagoya Institute of Technology

Ngk Insultators, Ltd.

Morimichi Watanabe

Tsutomu Nanataki

Jun Yoshikawa

Kei Sato

Kiyoshi Matsushima

Yuji Katsuda

Asumi Jindo

Yosuke Sato

Yoshinori Isoda

Hiroshi Fukui

Katsuhiro Imai

Yoshitaka Kuraoka

Yukihisa Takeuchi

Takashi Yoshino

Tomohiko Sugiyama

Nobuyuki Kondo

Risa Miyakaze

Shinji Kawasaki

Masahiko Namerikawa

Takahiro Ishikawa

Toru Hayase

Kenichiro Aikawa

Takahiro Maeda

Shohei Oue

Hiroshi Ito

Hirofumi Yamaguchi

Hiroharu Kobayashi

Atsushi Watanabe

Masaki Tanemura

Hirohisa Ogawa

There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from a region radially extending from the center of the AlN single-crystal substrate to 0.7r, and an outer circumferential section, which is a region excluding the central section and the middle section from an entire region of the AlN single-crystal substrate, a dislocation density Dc of the central section, a dislocation density Dm of the middle section, and a dislocation density Dp of the outer circumferential section satisfy the relationship Dm>Dp>Dc.

AlN single crystal substrate

Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

SiC composite substrate and composite substrate for semiconductor device

A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×10atoms/cmto 1×10atoms/cminclusive and a concentration of Al is from 1×10atoms/cmto 1×10atoms/cminclusive.

Rare earth-containing SiC substrate and method for producing SiC epitaxial layer

Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

Underlying substrate

An α-GaOsemiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

α-GaOsemiconductor film

Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of α-AlO, α-CrO, α-FeO, α-TiO, α-VO, and α-RhO.

Ground substrate and method for producing same

Provided is an α-GaObased semiconductor film having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cmin Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cmor less.

Semiconductor film

Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, or a solid solution containing two or more selected from the group consisting of α-AlO, α-CrO, α-FeO, α-TiO, α-VO, and α-RhO, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

Provided is a α-GaObased semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution as a main phase. The maximum value θand the minimum value θfor off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of θ-θ≤0.30°. The off-angle is defined as an inclination angle θ of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×10atoms/cmor more and 1×10atoms/cmor less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Biaxially oriented SiC composite substrate and semiconductor device composite substrate

A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×10/cmor less.

SiC composite substrate including biaxially oreinted SiC layer and semiconductor device

An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a total profile height Pt of 0.8 μm or less.

Oriented ceramic sintered body production method and flat sheet

Provided is a semiconductor film having a corundum-type crystal structure composed of α-GaOor an α-GaOsolid solution and the crystal defect density on at least one surface of the semiconductor film is 1.0×10/cmor less.

A method for producing an oriented sintered body according to the present invention includes the steps of: (a) preparing a multilayer body, the multilayer body including a layer including a fine raw-material powder and a layer including a plate-like raw-material powder which are alternately stacked each other, particles of the plate-like raw-material powder being arranged such that surfaces of the particles of the plate-like raw-material powder extend along a surface of the layer including a fine raw-material powder; and (b) sintering the multilayer body.

Growing community of inventors

Nagoya, Japan

Morimichi Watanabe