Ricoh Company, Ltd.

Ricoh Elemex Corporation

Other

Ricoh Seiki Company, Ltd.

Morimasa Kaminishi

Shunichi Sato

Takashi Takahashi

Naoto Jikutani

Akihiro Itoh

Takayuki Yamaguchi

Junichi Azumi

Yukito Sato

Hiroyoshi Shoji

Hirokazu Iwata

Kei Hara

Yukito Satoh

Takeshi Kawashima

A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser

A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a current confined structure, and an upper reflecting mirror. A lower electrode is connected to the semiconductor substrate, and an upper electrode is connected to the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between the upper electrode and the lower electrode. The semiconductor substrate is inclined with respect to (100) plane. The active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.

Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus

A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Vertical-cavity, surface-emission type laser diode and fabrication process thereof

A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Semiconductor light emitter

Method of fabricating a semiconductor light-emitting device

Vertical-cavity surface-emission type laser diode and fabrication process thereof

Growing community of inventors

Miyagi, Japan

Morimasa Kaminishi