Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Morikazu Tsuno

Yoshinori Takami

Takanori Doi

An imaging device includes a photoelectric converter that converts incident light to charge, a semiconductor substrate that includes an element isolation region and a first impurity region of a first conductivity type, the first impurity region being electrically connected to the photoelectric converter, a plug that includes a first semiconductor, the plug being connected directly to the first impurity region, a pad that includes a second semiconductor, the pad being connected directly to the plug, and a first transistor that includes the first impurity region as one of a source and a drain and includes a first gate. The first impurity region is positioned between the first gate and a first portion of the element isolation region in plan view. The pad overlaps the first gate and the first portion in plan view.

Imaging device

An imaging device includes a photoelectric conversion layer, a counter electrode provided above the photoelectric conversion layer, a pixel electrode that faces the counter electrode with the photoelectric conversion layer disposed between the counter electrode and the pixel electrode, and a contact plug covered with the pixel electrode and connected to the pixel electrode. The pixel electrode includes a first layer and a second layer provided on the first layer in contact with the first layer. A surface of the first layer that is in contact with the second layer has a protrusion that protrudes upward.

An imaging device includes a semiconductor substrate and a pixel. The semiconductor substrate includes first and second surfaces that oppose each other, a first region containing an impurity of a first conductivity type, a second region that contains an impurity of a second conductivity type and that is closer to the first surface than the first region is, a third region that contains an impurity of the first conductivity type and that is closer to the first surface than the second region is, and a fourth region that provides connection between the first and third regions and that contains an impurity of the first conductivity type. The pixel includes a photoelectric converter, and a first diffusion region that is electrically connected to the photoelectric converter, that is located in the third region, that is exposed at the first surface, and that overlaps the entire first diffusion region in plan view.

Imaging device having a diffusion region electrically connected to a photoelectric converter and overlapping a region penetrating another region of opposite conductivity

A solid state imaging device includes a transfer transistor for transferring signal charges generated by photoelectric conversion to a floating diffusion layer, a reset transistor for resetting a potential of the floating diffusion layer, and an amplifying transistor for outputting a signal corresponding to the potential of the floating diffusion layer. A low concentration impurity region having an impurity concentration lower than that of the first conductivity type semiconductor region is formed in part of a surface portion of the first conductivity type semiconductor region which is located below a gate electrode of the amplifying transistor and serves as a well region of the amplifying transistor.

Growing community of inventors

Toyama, Japan

Morikazu Tsuno