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USA as Represented by Secretary of the Navy

Morgan E Ware

Matthew Gadlage

Thomas P White

H Alan Mantooth

Gregory J Salamo

Satish Kumar Shetty

Timothy Allen Morgan

Homer Alan Mantooth

Kevin D Goodman

Pijush Kanti Ghosh

Satish Shetty

Thomas Paul White

Gregory Salamo

A Hall sensor with a main current path and a sensor path including at least one Schottky contact thereby increasing the capabilities above an ohmic contact Hall sensor.

Schottky-Hall effect and sensor

A microelectronic device that is radiation hardened through the incorporation of a quantum structure getter (QSG) is provided. The device, such as a field effect transistor (FET) includes a conductive channel and a material stack comprising: a capping layer, one or more barrier layers comprising a high band gap, one or more quantum structures comprising a small band gap, and a substrate. The quantum structures are positioned in close proximity to the conductive channel to form a quantum well charge getter. The getter forms a low energy area beneath the FET, which traps and confines electron-hole pair wave functions produced from ionizing radiation, causing the wave functions overlap, recombine, and produce light emission. The quantum structures getter the wave functions, which reduces the ionized photocurrent that reaches the conducting channel, thereby hardening the microelectronic device against ionizing radiation.

Quantum structure getter for radiation hardened transistors

GaN/AlGaN/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of &#x2212;183&#xb0; C. and 252&#xb0; C.

Micro-hall effect devices for simultaneous current and temperature measurements for both high and low temperature environments

Growing community of inventors

Fayetteville, AR, United States of America

Morgan E Ware