Kla Tencor Corporation

Kla Corporation

Moran Zaberchik

Roie Volkovich

Yoel Feler

Liran Yerushalmi

David Izraeli

Renan Milo

Eran Amit

Nadav Gutman

A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

Method for measuring and correcting misregistration between layers in a semiconductor device, and misregistration targets useful therein

A misregistration measurement and region of interest selection system (MMRSS) for measuring misregistration between at least two layers on a wafer in the manufacture of semiconductor devices, the MMRSS including a set of misregistration metrology tools, including at least two misregistration metrology tools, and a misregistration analysis and region of interest selection engine operative to: analyze a plurality of misregistration measurement data sets associated with a set of regions of interest (ROIs) of at least one measurement site on the wafer and at least partially generated by at least one first misregistration metrology tool, and wherein each of the data sets is associated with a set of quality metrics, identify a recommended ROI and communicate the recommended ROI to at least one second misregistration metrology tool of the set of misregistration metrology tools, the second misregistration metrology tool being operative to generate misregistration metrology data associated with the recommended ROI.

Selection of regions of interest for measurement of misregistration and amelioration thereof

Methods and systems are disclosed for determining overlay in a semiconductor manufacturing process. Radiation reflected from a diffraction pattern in a metrology target may include +1 and &#x2212;1 diffraction patterns at different wavelengths and focal positions. The different wavelengths of radiation may be in a waveband where the sensitivity of contrast to wavelength is at a maximum. The reflected radiation may be analysed to obtain measured values of overlay as well as amplitude and/or phase corresponding to points distributed over the target, for different wavelengths and focal positions. The measured values of overlay may undergo a series of operations to determine the overlay. The determination may use an assumption that the amplitude and phase are unequal in the +1 and &#x2212;1 diffraction orders.

Overlay measurement using phase and amplitude modeling

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Ahuzat Barak, Israel

Moran Zaberchik