The Boeing Company

Hughes Electronics Corporation

Moran Haddad

Richard Roland King

Nasser H Karam

James H Ermer

Christopher M Fetzer

Philip T Chiu

Bruce T Cavicchi

Dimitri Daniel Krut

Xingquan Liu

Karim S Boutros

Joseph Charles Boisvert

Peter C Colter

Rengarajan Sudharsanan

Peter Hebert

Uming T Jeng

Dennis G Hom

Joseph P O'Day

Charles B Morrison

Li Cai

Joseph P O'DAY

Dennis S Hom

Bruce T Cavvichi

A solar cell design includes fabricating one or more gridlines for extracting photo-current on a front surface of the solar cell, wherein each of the gridlines is a metal grid and a cap layer, and at least a portion of the metal grid is deposited on the cap layer; and controlling an alignment of the metal grid relative to the cap layer, and a width of the cap layer relative to a width of the metal grid, so that a minimum cap edge offset distance value is about 1 μm or more. The alignment of the metal grid relative to the cap layer and the width of the cap layer relative to the width of the metal grid are controlled at areas on the front surface of the solar cell opposite where welding occurs on a back-side of the solar cell. The alignments and widths of the metal grid relative to the cap layer are controlled by a photomask.

Solar cell design that minimizes weld attrition and gridline shadowing losses

The present disclosure generally relates to a solar cell device that includes a substrate comprising a front side surface and a backside surface; an epitaxial region overlying the substrate, wherein the epitaxial region comprises a first Bragg reflector disposed below a first solar cell, wherein the first solar cell has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell, and is operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell, and may additionally comprise a second Bragg reflector operable to reflect a third range of radiation wavelengths back into the first solar cell.

Structures for increased current generation and collection in solar cells with low absorptance and/or low diffusion length

The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

A semiconductor device having at least one layer of a group III&#x2013;V semiconductor material epitaxially deposited on a group III&#x2013;V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III&#x2013;V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.

Integrated semiconductor circuits on photo-active Germanium substrates

A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.

Wide-bandgap, lattice-mismatched window layer for a solar conversion device

A diffused junction semiconductor ( ) for detecting light ( ) at a predetermined wavelength is provided including a base ( ) and an epitaxial structure ( ) electrically coupled to the base ( ). The epitaxial structure ( ) forms a p-n junction ( ) in the base ( ). The epitaxial structure ( ) includes at least one diffusion layer ( ) electrically coupled to the base ( ). At least one of the diffusion layers ( ) contributes impurities in at least a portion of the base ( ) to form the p-n junction ( ) during growth of the epitaxial structure ( ). A method for performing the same is also provided.

Diffused junction photodetector and fabrication technique

A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.

Multilayer semiconductor structure with phosphide-passivated germanium substrate

An improved photovoltaic cell has an active silicon (Si) or silicon-germanium (SiGe) substrate subcell having an active upper side and characterized by a substrate bandgap. One or more upper subcells are disposed adjacent the upper side and current matched with the substrate subcell, with the upper subcell(s) typically having bandgap(s) greater than the substrate bandgap. A transition layer may be placed intermediate the upper side and the upper subcell(s).

Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications

An improved photovoltaic cell, according to one embodiment, includes a base layer; a primary window layer having a first type of doping, with the primary window layer being disposed over the base layer; and a secondary window layer having the first type of doping, with the secondary window layer being disposed over the primary window layer. In another embodiment, the improved photovoltaic cell has a multilayer back-surface field structure; a base layer disposed over the back-surface field structure; and a primary window layer disposed over the base layer. In yet another embodiment, the photovoltaic cell includes a base layer; and a primary window layer disposed over the base layer, with the primary window layer having a thickness of at least about 1000 Angstroms.

Growing community of inventors

Granada Hills, CA, United States of America

Moran Haddad