Texas Instruments Corporation

Mooshi R Namordi

William A White

A MESFET logic gate wherein a logic switch node is both a-c coupled to the output node, preferably by a capacitor network and is also separately DC coupled to it, preferably by a voltage level shifter circuit. The direct capacitative coupling increases the high-frequency cut-off frequency, and reduces the current requirement of the voltage level shifter circuit. The voltage level shifter circuit, even using small width devices, provides low frequency and DC response, so that circuits using the gate of the present invention do not require initialization and refresh cycle. Thus, both high speed and low power are attained.

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Acton, MA, United States of America

Mooshi R Namordi