Samsung Electronics Co., Ltd.

Moonyoung Jeong

Satoru Yamada

Dongjin Lee

Kyoung-Ho Jung

Kyuho Han

Joonseo Lee

Sungjin Kim

Junsoo Kim

Ji Eun Lee

Han Jin Lim

Sung Heo

Jiho Yoo

Eunae Cho

Gyeongsu Park

Yongsu Kim

Youngsung Kho

Dong Su Ko

Jiyoung Kim

Dongsoo Woo

Giwon Lee

Kiseok Lee

Hyun Uk Park

Taehyun An

Jaehyun Hwang

Ji-eun Lee

Hyungeun Choi

Sanghyun Lee

Min Hee Cho

Hyun Soo Park

Keunnam Kim

Hyun Wook Park

Sangyeon Han

Seungjae Jung

Chunhyung Chung

Kyo-Suk Chae

Young-Sung Kho

Joongchan Shin

Hyoshin Ahn

Joohyun Jeon

Sungsam Lee

Euichul Jeong

Eunae Choi

Taegyu Kang

Eunsuk Jang

A semiconductor memory device includes a word line extended parallel to a top surface of a semiconductor substrate, a channel pattern crossing the word line and having a long axis parallel to the top surface, a bit line extended perpendicular to the top surface and in contact with a first side surface of the channel pattern, and a data storage element in contact with a second side surface of the channel pattern opposite to the first side surface. The channel pattern includes a first dopant region adjacent to the bit line, a second dopant region adjacent to the data storage element, and a channel region between the first and second dopant regions and overlapped with the word line. At least one of the first and second dopant regions includes a low concentration region adjacent to the channel region, and a high concentration region spaced apart from the channel region.

Semiconductor memory device

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Semiconductor device and method of manufacturing the same

A semiconductor memory device includes: a bit line extending on a substrate in a vertical direction; a transistor body part including a first source-drain region, a monocrystalline channel layer, and a second source-drain region that are sequentially arranged in a first horizontal direction and connected to the bit line; gate electrode layers extending in a second horizontal direction that is orthogonal to the first horizontal direction, with a gate dielectric layer between the gate electrode layers and the monocrystalline channel layer, and covering upper and lower surfaces of the monocrystalline channel layer; and a cell capacitor including a lower electrode layer, a capacitor dielectric layer, and an upper electrode layer at a side of the transistor body that is opposite to the bit line in the first horizontal direction and is connected to the second source-drain region.

The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). The present disclosure is to provide a multicast service in a wireless communication system and comprises the steps of: receiving a multicast group participation message transmitted from a terminal via a communication session from a terminal to a first network entity; generating a multicast tunnel generation request message on the basis of the multicast group participation message, and transmitting the same to the first network entity; and generating a multicast service request message on the basis of the multicast group participation message, and transmitting the same to a second network entity. The present research is research that has been conducted with the support of the 'Cross-Departmental Giga KOREA Project' funded by the government (the Ministry of Science and ICT) in 2017 (No. GK17N0100, millimeter wave 5G mobile communication system development).

Method and apparatus for multicast in communication system

The present disclosure relates to a pre-5-Generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4-Generation (4G) communication system such as long-term evolution (LTE). Disclosed is radio access technology (RAT) switching in a wireless communication system, and an operating method of a server for managing a session comprises the steps of: receiving information related to a determination on the switching of a RAT; determining, on the basis of the information, whether the RAT for providing a service to a terminal is switched from a first RAT to a second RAT; and transmitting, to an object for processing a user plan, a message indicating that a data route of the terminal will be switched from the first RAT to the second RAT.

Apparatus and method for switching wireless access technology in wireless communication system

Provided is a method of establishing a session for communication with a local network in a wireless communication system, the method including obtaining a request for using an integrated mode in which a user plane entity of a base station uses an integrated user plane entity that performs an operation of a user plane function (UPF) together, when a session between a local network and a user equipment (UE) is established, determining based on user information of the UE whether to accept use of an integrated mode, selecting the integrated user plane entity as a user plane entity in which the session is to be established, based on a result of the determining, and transmitting a session establishment request to the selected integrated user plane entity.

Method, apparatus and system for establishing session for communication with local network in wireless communication system

Provided are a method and apparatus for managing a session in a wireless communication system. The method includes identifying a session management module with a failure from among a plurality of session management modules that each manage at least one session; determining a substitute module that replaces the session management module with the failure; obtaining, from a control plane entity, information about at least one session managed by the session management module with the failure; and controlling the substitute module to manage the at least one session, based on the obtained information about the at least one session.

Method, apparatus and system for managing session in wireless communication system

A method of a first terminal is provided. The method includes communicating with a first gateway by using a first internet protocol (IP) address allocated to the first terminal, according to a first IP session, in response to a distance between the first terminal and a second gateway being equal to or less than a predetermined threshold, establishing a second IP session with the second gateway while the first IP session is set in the first terminal, receiving, from a second terminal, a first IP session-release message about the first IP session via the second gateway by using a second IP address according to the second IP session, when data from the first terminal is received by the second terminal according to the first IP session, and in response to the first IP session-release message being received from the second gateway, releasing the first IP session with the first gateway.

Method and device for performing communication

Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.

Semiconductor device having a gate and method of forming the same

A semiconductor device may include a device isolation region configured to define an active region in a substrate, an active gate structure disposed in the active region, and a field gate structure disposed in the device isolation region. The field gate structure may include a gate conductive layer. The active gate structure may include an upper active gate structure including a gate conductive layer and a lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure. The lower active gate structure may include a gate conductive layer. A top surface of the gate conductive layer of the field gate structure is located at a lower level than a bottom surface of the gate conductive layer of the upper active gate structure.

Semiconductor device having buried gate structure and method of fabricating the same

A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Moonyoung Jeong