University of Illinois

Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Company

Moonsub Shim

Peter Trefonas, Iii

Kishori Deshpande

Nuri Oh

Jake Joo

You Zhai

Sooji Nam

Jong Keun Park

Seok Kim

Jieqian Zhang

Jun Kyu Park

Edward Greer

Jaebum Joo

Hohyun Keum

Trevor Ewers

Bong Hoon Kim

Yiran Jiang

John A Rogers

Jang-Ung Park

Seong Jun Kang

Seongyong Cho

Coskun Kocabas

The present disclosure describes one or more embodiment of a method for creating a patterned quantum dot layer. The method includes bringing a patterning stamp in contact with a layer of quantum dots disposed on a substrate, the patterning stamp comprising a patterned photoresist layer disposed on an elastomer layer, such that a portion of the quantum dots in contact with the patterned photoresist layer adheres to the patterning stamp, the portion of the quantum dots being adhered quantum dots. The method also includes peeling the patterning stamp from the substrate with a peeling speed larger than a pre-determined peeling speed to remove the adhered quantum dots from the substrate. A remaining portion of the quantum dots forms a patterned quantum dot layer on the substrate.

Photoresist contact patterning of quantum dot films

Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element,

Optoelectronic device and methods of use

Provided is a method of creating an image on an array of optoelectronic elements comprising

Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.

Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.

The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.

Methods of making spatially aligned nanotubes and nanotube arrays

Growing community of inventors

Savoy, IL, United States of America

Moonsub Shim