Lg Display Co., Ltd.

Lg Electronics Inc.

Samsung Medison Co., Ltd.

Moonho Park

Sungjin Lee

YoungJang Lee

Sohyung Lee

Kyungmo Son

JaeHoon Park

Hoyoung Jung

Seunghyo Ko

Seongpil Cho

Sangsoon Noh

Mijin Jeong

Jihyun Ahn

Sujin Ahn

Youngchan Park

Hojun Lee

Yeongkyeong Seong

Anjan Kumar Paul

Cheolmin Cho

Jeonggu Kang

Kihong Son

Jaehoon Park

A motor control apparatus may relate to a motor control apparatus, an air conditioning system, and a constant airflow control method of a fan motor control apparatus of an indoor unit, in which table information on an airflow command value corresponding to a reception pattern or type of a signal is prestored to determine a corresponding airflow command value from the table information according to a result of receiving the signal from a central control apparatus so as to control an operation of a fan motor.

Apparatus for controlling fan motor, air conditioning system and constant airflow control method of apparatus for controlling fan motor

Disclosed is a method for operating an ultrasound diagnostic apparatus, comprising the steps of: acquiring a first ultrasound image of an object; detecting a first nerve region corresponding to a first target nerve in the first ultrasound image; determining whether an abnormal region is present in the first nerve region of the first ultrasound image, on the basis of a determination standard for determining whether a target nerve is abnormal; and on the basis of a result of determining whether an abnormal region is present in the first nerve region, displaying at least one of information on the abnormal region and basis information regarding the basis for determining the abnormal region as abnormal.

Ultrasound diagnostic apparatus and method for operating same

Discussed are a power converting apparatus, a photovoltaic module, and a photovoltaic system including the photovoltaic module and the power converting apparatus. The power converting apparatus is capable of converting direct current (DC) power from the solar cell module into alternating current (AC) power, outputting the AC power to a grid, and detecting a signal indicative of abnormality in grid power caused by power cut or the like, thereby preventing an islanding operation.

Power converting apparatus, photovoltaic module, and photovoltaic system including the same

Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Thin film transistor substrate with intermediate insulating layer and display using the same

Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Thin film transistor substrate and display using the same

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

Growing community of inventors

Seoul, South Korea

Moonho Park