Electronics and Telecommunications Research Institute

Moon-Seok Kim

Ki-Hong Kim

Bong-Soo Lee

Sang-Kyung Yoo

Sanghan Lee

Jun-Ki Kang

Seok Hee Ryu

Bong Soo Lee

Junki Kang

Rae Lee

Disclosed herein are a method for generating Gaussian error data using flash memory and an apparatus using the method. The method includes receiving a request to generate Gaussian error data and delivering an operation command to flash memory; generating Gaussian error noise based on a threshold voltage that is generated when the flash memory performs the operation command; and generating Gaussian error data so as to correspond to the Gaussian error noise and providing the same.

Method for generating Gaussian error data using flash memory and apparatus using the same

Disclosed herein are a Gaussian sampling apparatus and method based on resistive RAM. The Gaussian sampling apparatus based on resistive RAM includes Resistive RAM (RRAM) in which a resistive switching layer is disposed between an upper electrode and a lower electrode, and a sampling controller, wherein the sampling controller is configured to perform an operation corresponding to an erase command of applying a reset voltage to the RRAM when a Gaussian error request is received from an outside of the Gaussian sampling apparatus, perform an operation corresponding to a program command of applying a set voltage to the RRAM after the operation corresponding to the erase command has been completed, perform an operation of reading resistance data from the RRAM, and provide a response to the outside of the Gaussian sampling apparatus by transmitting the resistance data of the RRAM as Gaussian error data.

Gaussian sampling apparatus and method based on resistive random access memory

An apparatus and method that prevent a bit error in a static random access memory (SRAM)-based Physically Unclonable function (PUF). The method for preventing an error in a PUF includes selecting any value, from a physically unclonable function based on a volatile memory device, as an input value, and checking a response corresponding to the selected input value, classifying cells having a plurality of bits corresponding to the response depending on frequency of error occurrence, calculating a number of white cells, in which an error does not occur, from classified results, and determining whether the number of white cells is greater than a preset threshold number of white cells, and selecting an input value of the physically unclonable function based on results of determination.

Apparatus and method for preventing error in physically unclonable function

A method and apparatus for controlling the operation of flash memory are provided. The apparatus for controlling the operation of flash memory includes a control unit and a voltage adjustment unit. The control unit outputs a control signal adapted to change one or more of the program, erase and read voltage conditions for the flash memory to the voltage adjustment unit in response to the input of a PUF mode selection signal. The voltage adjustment unit changes the one or more of the program, erase and read voltage conditions for the flash memory in response to the input of the control signal.

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Daejeon, South Korea

Moon-Seok Kim