Samsung Electronics Co., Ltd.

Sungkyunkwan University

Moon-sang Lee

Sung-soo Park

Young-soo Park

Dae-ho Yoon

Jin A Kim

Hwa-kyung Lee

Bong-Kyun Kang

A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.

Method of growing nitride semiconductor layer

A method of growing a nitride semiconductor layer includes forming a plurality of nano-structures on a substrate, forming a first buffer layer on the substrate such that upper portions of each of the nano-structures are exposed, removing the nano-structures to form voids in the first buffer layer, and growing a nitride semiconductor layer on the first buffer layer including the voids.

Method of growing nitride semiconductor layer and nitride semiconductor formed by the same

Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates

A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.

Method of manufacturing nitride semiconductor device

A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Nitride semiconductor device and method of manufacturing the same

Provided are a method and apparatus for detecting a position of an object using radio frequency identification (RFID). The method includes calculating a position of a moving object using a first RFID tag installed at a particular position in a predetermined space while the moving object is moving, sensing a second RFID tag included in the object, determining the position of the object as the position calculated at a point of time when the RFID tag included in the object is sensed, and displaying the determined position.

Method and apparatus for detecting position

A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.

Method of manufacturing large area gallium nitride substrate

A method and apparatus for reproducing network content are provided. An apparatus for reproducing network content includes a first content list queue storing a content list received from content providing servers; a content list queue management module changing a content list stored in the first content list queue according to a user's command to change the content list; a second content list queue storing the content list changed by the content list queue management module; a content pre-fetch module pre-fetching at least one element of content from the content providing servers based on the second content list queue and storing the content in a local storage unit; and a content reproduction module seamlessly reproducing the at least one element of content stored in the local storage unit.

Method and apparatus for reproducing network content

A method and an apparatus to set a telephony mode of a mobile terminal in which an audio call mode and a video call mode are automatically set using gyroscope characteristics and a user's behavior characteristics, the method including: detecting a direction of motion of the mobile terminal when there is an incoming call event; and setting the telephony mode to an audio call mode or a vide call mode according to the detected direction of the motion.

Method and apparatus for setting telephony mode of mobile terminal

A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.

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Seoul, South Korea

Moon-sang Lee