Samsung Electronics Co., Ltd.

Moon-Kyun Song

Seok-Jun Won

Ha-Jin Lim

Moon-han Park

Hyung-Suk Jung

Weon-Hong Kim

Jin-ho Do

A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon.

Fabricating method of a semiconductor device

Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas.

Methods of manufacturing semiconductor devices

Growing community of inventors

Gyeonggi-do, South Korea

Moon-Kyun Song