Samsung Electronics Co., Ltd.

Moon-Kyu Park

Sang-Jin Hyun

Hoon-Joo Na

Jae-Yeol Song

Yoon-Tae Hwang

Ki-Joong Yoon

Sang-Bom Kang

June-Hee Lee

Yong-Ho Ha

Hye-Lan Lee

Oh-seong Kwon

Jae-Jung Kim

Sung-kee Han

Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

Semiconductor devices and methods of fabricating the same

A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structures

A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

Methods of curing a dielectric layer for manufacture of a semiconductor device

Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

Semiconductor device and method for fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Moon-Kyu Park