Samsung Electronics Co., Ltd.

Moon-hyun Yoo

Jong-bae Lee

Jae-pil Shin

Dae-wook Kim

Young-ile Kim

Sang-Hoon Lee

Sang-ho Park

Soo-Han Choi

Ji-Seong Doh

Ho Jun Shim

Jong-Bae Lee

Yong-Jin Chun

Seung-ho Jung

Jin-sook Choi

Sung-Hee Yun

Jin-won Kim

Joon-ho Choi

Ji-suk Hong

Provided are a system for analyzing a mask topography, which can reduce calculation time and increase calculation accuracy in consideration of a mask topography effect, and a method of forming an image using the system. The system and method simultaneously obtains a first electric field using a Kirchhoff method without considering a pitch formed on a mask and obtains a second electric field using an electromagnetic field analysis method considering the pitch, and then determines a third electric field on a pupil surface of a projection lens by combining the first electric field and the second electric field of forming an image, so as to calculate the image of an optical lithography system which includes an illumination system and a projection optical system and to which the projection lens belongs.

System for analyzing mask topography and method of forming image using the system

A method and an apparatus for verifying a logic circuit, capable of quicker operation, being applied to a logic gate-level or transistor-level circuit design, and verifying timing and analog signal characteristics of a signal. The logic circuit verification method includes a wave file generation stage and a logic circuit verification stage. The wave file generation stage generates a wave file that includes the waveforms of all nodes of the logic circuit using a design source file of the logic circuit. The stage of verification of the logic circuit verifies the logic circuit using a design reference file, which includes ideal operations of all the nodes of the logic circuit, and the wave file.

Method and apparatus for verifying logic circuit

A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.

Mask set for microarray, method of fabricating mask set, and method of fabricating microarray using mask set

A method for estimating statistical distribution characteristics of physical parameters of a semiconductor device includes manufacturing a plurality of semiconductor device chips, each having a plurality of transistors, preparing electrical characteristic data by measuring electrical characteristics of the plurality of transistors included in the plurality of chips, extracting an inter-chip distribution characteristic and an intra-chip distribution characteristic of the electrical characteristics by analyzing the electrical characteristic data, generating random number data satisfying the extracted inter-chip and intra-chip distribution characteristics, and performing a simulation for extracting statistical distribution characteristic data of the physical parameters of the chips, based on the random number data.

Methodology for estimating statistical distribution characteristics of physical parameters of semiconductor device

Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance Dfrom the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.

Method and apparatus for designing fine pattern

In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance Din the first direction from the second pattern.

Mask for forming fine pattern and method of forming the same

Disclosed is method for estimating statistical distribution characteristics of product parameters. The method comprises determining n number of product parameters, which characterize a product, and m number of characteristic parameters dependent on the product parameters, determining m number of correlation functions that represent the characteristic parameters in terms of the product parameters, and obtaining inverse functions of the correlation functions that represent the product parameters in terms of the characteristic parameters. After fabricating test products to empirically determine quantitative relations between the product and characteristic parameters, the method includes measuring k number of test products and preparing measured data of the characteristic parameters. Thereafter, the method includes estimating statistical characteristics of the product parameters corresponding with a distribution of the measured data of the characteristic parameters using inverse functions of the correlation functions.

Growing community of inventors

Suwon-si, South Korea

Moon-hyun Yoo