Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Moon-Hee Park

Chang-Su Seo

Tae-Wook Kang

Kwan-Hee Lee

Chang-Soo Kim

Chang-Yong Jeong

Won-Kyu Kwak

Eun-Ah Kim

Hyun-Eok Shin

Dong-Young Sung

Sung-Sik Bae

Jeong-Bai Choi

Jin-Woo Park

Jang-hyuk Kwon

Sang-Hun Oh

Seoung-Yoon Ryu

Kyoung-Wook Min

Ho-jin Kang

A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material.

Flat panel display and method of fabricating the same

A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.

Semiconductor device and method of fabricating the same

A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode.

Method of fabricating flat panel display having pad electrode

An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.

Organic light emitting device and method of fabricating the same

An organic light emission display and a fabrication method thereof. According to one embodiment of the present invention, a fabrication method of an organic light emission display includes: forming a light emitting part on a first area of a substrate and a pad part on a second area of the substrate; forming a sealing substrate by etching an area of the sealing substrate corresponding to the light emitting part and etching an area of the sealing substrate corresponding to the pad part; and sealing the light emitting part by attaching the substrate to the sealing substrate.

Organic light emission display and fabrication method of the same

An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is electrically connected to the thin film transistor. An auxiliary electrode is formed on the same layer as the lower electrode, and a pixel defining layer is formed on edges of the lower electrode, thereby defining an opening which exposes a portion of the lower electrode. An organic layer is formed on the portion of the lower electrode exposed by the opening, and an upper electrode is formed on an entire surface of the insulating substrate and electrically connected to the auxiliary electrode. An edge of the auxiliary electrode may have a taper angle of at least 90&#xb0;.

Top emission organic light emitting diode display using auxiliary electrode to prevent voltage drop of upper electrode and method of fabricating the same

Flat panel display having pad electrode

An organic light-emitting display device and a method of fabricating the device are disclosed. The organic light-emitting display device includes a thin-film transistor positioned on a substrate that has a semiconductor layer, a gate electrode, and source and drain electrodes. A first electrode is positioned, which is connected to either the source electrode or drain electrode. A reflective layer, which is spaced apart from the source electrode or drain electrode, is positioned below the first electrode. An organic functional layer having at least an emission layer is positioned on the first electrode. A second electrode is positioned on the organic functional layer. The first electrode, the reflective layer, the organic functional layer, and the second electrode constitute an organic light-emitting diode.

Top-emission organic light-emitting display device

An organic light emitting display device including a thin film transistor in first and second regions on a transparent insulating substrate, a lower anode coupled to the thin film transistor, a reflective layer pattern formed on the lower anode in the first region, an upper anode formed on the reflective layer pattern in the first region and on the lower anode in the second region, and an organic layer formed on the upper anode in the first and second regions.

Organic light emitting display device and method for fabricating the same

An organic electroluminescence display device including a thin film transistor, a first electrode layer, a second electrode layer, and an organic layer. The thin film transistor includes a semiconductor layer, a gate electrode disposed over the semiconductor layer, and source and drain electrodes insulated from the gate electrode. The first electrode layer is coupled to either the source electrode or the drain electrode, and the first electrode layer and the gate electrode are disposed on the same layer. The second electrode layer is disposed above the first electrode layer, and an organic layer, which includes at least a light emitting layer, is interposed between the first electrode layer and the second electrode layer.

Organic electroluminescence display device

Organic light emitting device having triple layered pixel electrode

The present invention relates to a top-emission type organic electroluminescence display device, more particularly, to a top-emission type organic electroluminescence display device comprising double passivation layers of an inorganic insulation layer and an organic planarization layer formed on an upper part of a thin film transistor comprising a semiconductor layer, gate electrode and source/drain electrodes on a substrate; a reflection layer formed between the double passivation layers; and a first electrode layer formed of a transparent material and formed on a reflection layer. Furthermore, a top-emission type organic electroluminescence display device additionally comprises a reflection layer between the passivation layers and the first electrode layer to maximize reflection efficiency. Additionally, luminance between pixels is uniformed by stabilizing contact resistance between the electrodes during driving of the display device with the source/drain electrodes of the thin film transistor being directly contacted with the transparent electrode layer.

Growing community of inventors

Suwon-si, South Korea

Moon-Hee Park