Samsung Electronics Co., Ltd.

Clemson University

Korea Advanced Institute of Science and Technology

Imperial Innovations Limited

Moon Gyu Han

Eun Joo Jang

Yong Wan Jin

Dae Young Chung

Kyung Bae Park

Kwanghee Kim

Takkyun Ro

Kun Su Park

Tae Hyung Kim

Chul Joon Heo

Won Sik Yoon

Hongkyu Seo

Kwang Hee Lee

Tae Ho Kim

Dong-Seok Leem

Seon-Jeong Lim

Gae Hwang Lee

Sung Young Yun

Hyo Sook Jang

Sung Woo Kim

Oul Cho

Yeong Suk Choi

Chan Su Kim

Hong-seok Lee

Sang Jin Lee

Tadao Yagi

Hyesung Choi

Jung Woo Kim

Sang-Yoon Lee

Seung-hoon Han

In-kyeong Yoo

Martin Heeney

Yong-wan Jin

Kyu Sik Kim

Jaejun Chang

Ohkyu Kwon

Xavier Bulliard

Dae-hee Lee

Heejae Lee

Dongseon Lee

Sujin Park

Hiromasa Shibuya

Youn Hee Lim

Stephen H Foulger

Seog-jin Jeon

Hongshik Shim

Chui Joon Heo

Chul-Joon Heo

Sakurai Rie

Chang Gyun Shin

Yagi Tadao

Rie Sakurai

Katsunori Shibata

Kiyohiko Tsutsumi

Sun-kook Kim

Jung Ho Shin

Inkyeong Yoo

Satoko Ishibe

Soonmin Cha

Chuljoon Heo

Tatsuya Imase

Ji-Seon Kim

Young-soo Jeong

Brett Baatz

Minwon Suh

Kyung Jae Chung

Yang Han

Jay K Sperry

Samuel T Ingram

Gennadi A Emelchenko

Alexander M Kalsin

Nikolai A Ustynyuk

Tatyana A Peganova

Goo Hwan Shim

A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Quantum dot light-emitting device and electronic device

A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

Quantum dot light emitting device with electron auxiliary layer and display device including the same

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Electroluminescent device, and display device comprising thereof

A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

Quantum dot device, method of manufacturing the same, and electronic device

An electroluminescent device and a display device including the electroluminescent device. The electroluminescent device includes a first electrode and a second electrode each having a surface opposite the other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including quantum dots; and an electron transport layer disposed between the light emitting layer and the second electrode, the electron transport layer including inorganic material nanoparticles including an anion dopant including P, N, C, Cl, F, Br, S, or a combination thereof.

A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Squarylium compounds and infrared cut films, infrared cut filters and electronic devices including the same

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.

Quantum dot device and electronic device

An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

Light emitting device, production method thereof, and display device including the same

Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.

Non-invasive biometric sensor based on organic photodetector

Provided are a light emitting device includes a first electrode and a second electrode facing each other; an emissive layer disposed between the first electrode and the second electrode and a display device including the same. The emissive layer comprises: a first emission layer disposed on the first electrode and having a hole transporting property; a second emission layer and a third emission layer disposed on the first emission layer; wherein the second emission layer comprises an organic compound having a bipolar transport property and the third emission layer has a composition different from the first emission layer and the second emission layer; wherein the first emission layer, the second emission layer, and the third emission layer comprises a plurality of quantum dots, and wherein the first emission layer, the second emission layer, and the third emission layer are configured to emit light of a same color.

Light emitting device and display device including the same

A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.

Growing community of inventors

Suwon-si, South Korea

Moon Gyu Han