Samsung Electronics Co., Ltd.

Moon-Deock Kim

Jinwook Burm

Seung-Ryong Cho

An avalanche photodiode capable of generating a minimal surface leakage current as well as achieving a uniform electrical field. The avalanche photodiode includes a semiconductor substrate provided with a lower electrode underneath it, an amplification layer producing pairs of electron-holes through ionized collision of carriers injected by an internal electrical field, and an absorption layer producing the carriers according to splitting of the pairs of electron-holes by the electrical field. The avalanche photodiode further includes a contact layer formed on the absorption layer, with a core section in the center of the contact layer and a guard section surrounding the core section spaced apart from each other, and at least one upper electrode with a core electrode formed on the core section and a guard electrode formed on the guard section. The upper electrode generates the internal electrical field together with the lower electrode.

Growing community of inventors

Songnam-shi, South Korea

Moon-Deock Kim