Samsung Electro-Mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Yonsei University

Moon Chul Lee

Tae Yoon Kim

Tae Kyung Lee

Chang Hyun Lim

Duck Hwan Kim

Sang Uk Son

Jea Shik Shin

Tae Hun Lee

In Sang Song

Sang Kee Yoon

Won Jae Han

Jong Woon Kim

Ho Soo Park

Yeong Gyu Lee

Chul Kyu Kim

Jae Chang Lee

Chul Soo Kim

Hwa Sun Lee

Dae Hun Jeong

Dae Ho Kim

Yong Suk Kim

Sung Jun Lee

Sung Min Cho

Nam Jung Lee

Jing Cui

Sung Woo Han

Jae Hyoung Gil

Yoon Sok Park

Cui Jing

Yong Jin Kang

Hyun Min Hwang

Tah Joon Park

Jun Sik Hwang

Jin Suk Son

Ran Hee Shin

Ho Joon Park

Seung Hun Han

Sung Sun Kim

Je Hong Kyoung

In Young Kang

Byung Ha Park

Nam Soo Park

Jae Chun Lee

Seong Chan Jun

Woon Bae Kim

Kyong Bok Min

Sang Hyun Yi

Kyong Il Kim

Jie Ai Yu

Il Woo Kim

Dong Sik Shim

Jong Oh Kwon

Chang Yul Moon

Hyung Jae Park

Il Han Lee

Khudoyberdiyev Khurshidjon

A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

Resonator package and method of manufacturing the same

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.

Bulk acoustic wave resonator

A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.

Bulk-acoustic wave resonator

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 &#x212b;&#x2264;&#x394;Mg&#x2264;170 &#x212b; may be satisfied, &#x394;Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Acoustic wave resonator

An acoustic resonator includes: a resonating unit including a resonating unit including a piezoelectric layer and first and second electrodes disposed on a lower side and an upper side of the piezoelectric layer, respectively; a substrate disposed on a lower side of the resonating unit; a support unit providing a cavity between the substrate and the resonating unit; and an intermediate metal layer separated from the second electrode and disposed in the resonating unit such that at least a portion thereof is surrounded by the piezoelectric layer and the second electrode.

Acoustic resonator

An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar.

An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Bulk acoustic resonator and filter device

A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.

Bulk-acoustic resonator and elastic wave filter device

A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

Bulk-acoustic wave resonator and method for manufacturing the same

A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 &#x212b; or less.

Bulk acoustic resonator and filter including the same

Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Growing community of inventors

Suwon-si, South Korea

Moon Chul Lee