Samsung Electronics Co., Ltd.

Moojoon Shin

Kyungjae Park

Jongsu Park

A method of manufacturing a semiconductor device includes forming a lower structure including first repetitive patterns, and forming an upper structure including forming second repetitive patterns to correspond to each of the first repetitive patterns on the lower structure, and the forming second repetitive patterns includes preparing a design layout for the second repetitive patterns, forming a first correction layout including corrected second repetitive patterns by performing optical proximity correction (OPC) on the design layout, forming a second correction layout by performing position correction on the first correction layout to move a position of the corrected second repetitive patterns to correspond to a changed position of the first repetitive patterns according to physical deformation of the lower structure, manufacturing a mask using the second correction layout, and patterning a photoresist layer using the mask.

Growing community of inventors

Hwaseong-si, South Korea

Moojoon Shin