Samsung Electronics Co., Ltd.

Moojin Kim

Bongseong Kim

Unjoo Lee

Youngmook Oh

Jeongyun Lee

Kyungseok Min

Sughyun Sung

Je-Hun Woo

Seongjin Nam

YoungHoon Song

DeogJa Koo

A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.

Method of fabricating a semiconductor device

A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nperiod of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1period of the DC pulse signal, where 'n' denotes a natural number.

Plasma apparatus and method of operating the same

A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage.

Plasma apparatus and method of fabricating semiconductor device using the same

Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode by junction with the doped region.

Semiconductor device and method for forming the same

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Suwon-si, South Korea

Moojin Kim