Samsung Electronics Co., Ltd.

Moo Sup Lim

Young Chan Kim

Jin Ho Seo

Young Gu Jin

Jung Chak Ahn

Tae Sub Jung

Young Kyun Jeong

Young Tae Jang

Yong Hun Kwon

Ji Hun Shin

Hyung Jin Bae

Seung Ho Shin

Kang Sun Lee

Sung Ho Choi

Tae Chan Kim

Min Seok Oh

Sung Young Seo

Kyung Ho Lee

Min-Seok Oh

Ji Won Lee

Eun Sub Shim

Tae Han Kim

Yong Kyun Lim

Jong Eun Park

Seung Sik Kim

Hae-Kyung Kong

Chang Keun Lee

Sae Young Kim

Yong Jei Lee

Dong Joo Yang

Eung Kyu Lee

Dong-Yoon Jang

Hae Kyung Kong

An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

Image sensor

An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

Image sensors and distance measuring devices using the same

An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

Image sensor and imaging device

An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Image sensor and image processing system including the same

A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

Depth pixel included in three-dimensional image sensor and three-dimensional image sensor including the same

A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.

Three-dimensional image sensor and mobile device including same

An image sensor may include a photodiode configured to convert an optical signal into photogenerated charge, a sensing node adjacent to the photodiode and configured to sense the photogenerated charge, a read-out circuit configured to convert the photogenerated charge into an electrical signal and to output the electrical signal through an output line, and/or at least one capacitor formed between the sensing node and a conversion gain control line. The conversion gain control line corresponding to the at least one capacitor may be selectively connected to a ground line or the output line based on at least one control signal.

Image sensors comprising photodiodes and image processing devices including the same

The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Image sensor and image sensing system including the same

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Yongin-si, South Korea

Moo Sup Lim