Samsung Electronics Co., Ltd.

Other

Choongwae Pharm. Co.

Moo Sung Kim

Ki Tae Park

Hyun Jun Yoon

Bo Geun Kim

Sang Yong Yoon

Wook Ghee Hahn

Han-Jun Lee

Won Chul Lee

Hyun Seop Bae

Tae Seop Hwang

Chan Yong Ahn

Chang Hoon Oh

An automatic batting training apparatus includes: a bottom part; a hopper assembly disposed on one side of the bottom part to sequentially discharge a plurality of balls stored therein; and a driving assembly disposed on the other side of the bottom part and including a transfer module adapted to transfer the balls discharged from the hopper assembly in a vertical direction and an ascending/descending module having a tee stand disposed movable upward and downward in such a manner as to allow the balls received from the transfer module to be seated one by one onto top thereof to perform tee batting.

Automatic batting training apparatus

The present invention relates to an automatic batting tee apparatus that includes a ball storage unit for continuously feeding balls therein for batting; a lifting unit for putting the balls discharged from the ball storage unit onto an upper end of a tee rod for T-batting; and a feeding unit disposed between the ball storage unit and the lifting unit. The apparatus can smoothly and quickly feed balls, particularly, baseballs to the lifting unit with the tee rod, using the ball storage unit having a variable internal space and rotary equipment. The automatic batting tee apparatus according to an embodiment of the present invention allows for not only batting practice, but fielding practice by a cylinder unit.

Automatic batting tee apparatus

A method of operating a memory controller includes; counting a number of read operations directed to a page-group of data stored in a block and generating a first read count number, then comparing the first read count number with a first reference count threshold among a first set of reference count thresholds associated with the page-group, and upon determining that the first read count number exceeds the first reference count threshold, performing a copy-back operation of the page-group data from the block to another block.

Memory controller, method of operating, and apparatus including same

A pressure-type contact switch includes a bourdon tube which expands and contracts depending on water pressure in a discharge conduit applied by a pressure pump; a link having an end connected to a free end of the bourdon tube; a first actuating lever having an end connected to the other end of the link and rotatably installed about a first rotation axis; a first semi-circle gear formed at the other end of the first actuating lever; a first link gear engaged with the first semi-circle gear and fitted to a central rotation axis to thereby cause the central rotation axis to rotate in normal and reverse directions; a rotation member fitted to the central rotation axis; a second actuating lever which is installed to the rotation member to be rotatable about a second rotation axis; and an extension lever fitted to an end of the second actuating lever.

Pressure-type contact switch for use in operation of pressure pump

A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Flash memory device using adaptive program verification scheme and related method of operation

A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

Method of providing an operating voltage in a memory device and a memory controller for the memory device

Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.

Nonvolatile memory device, system and programming method with dynamic verification mode selection

A flash memory device includes a memory cell array made up of memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.

Flash memory device and method of programming same

A nonvolatile memory device detects a first memory cell to be successfully programmed in a program operation for multiple memory cells connected to a wordline, and then detects a number of program loops required to successfully program the remaining memory cells connected to the wordline. An initial program voltage of subsequent program operations is then adjusted based on the detected number of loops.

Growing community of inventors

Yongin-si, South Korea

Moo Sung Kim