Korea Institute of Science and Technology

Moo Sung Kim

Suk-Ki Min

Yong Kim

Seong-Il Kim

An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the amount of CCl.sub.4 gas supplied when forming an epitaxial layer on a patterned GaAs substrate in a metalorganic chemical deposition method, thus fabricating a desired quantum wire, and which is characterized by controlling a side-surface growth rate of an epitaxial layer in accordance with the CCl.sub.4 doping gas flow rate while an epitaxial layer is formed on a patterned GaAs substrate in a metalorganic chemical deposition method and in achieving a desired substantial flatness.

Epitaxial growth rate varying method for side surface of semiconductor

A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.

Semiconductor device epitaxial layer lateral growth rate control method

A heater for a chemical vapor deposition equipment includes a meandering heating wire made of either molybdenum or tungsten and having a diameter of about 1 mm. The heating wire is laid on a heater disc that is made of either molybdenum, tungsten or ceramic. The heater disc is holed at its center for receiving a susceptor rotating shaft. A plurality of heating wire fixtures support the heating wire on the heater disc while spacing the heating wire from the heater disc at an interval, thus to prevent the heating wire from directly contacting the heater disc. Each of the heating wire fixtures is provided with a pair of lateral through holes, that is, a heating wire hole formed in an upper section of each fixture and a fixing wire hole formed in a lower section of each fixture. The heater also includes heat resisting plates that are made of either molybdenum or tungsten and placed on the bottom surface and the side surface of the heater disc for preventing side and downward radiation of the heat of the heating wire. The heater heats a substrate to a high temperature not less than 1500.degree. C. and achieves an excellent heating efficiency.

Growing community of inventors

Seoul, South Korea

Moo Sung Kim