Micron Technology Incorporated

Cadence Design Systems, Inc.

Other

Moo Sung Chae

Dean D Gans

Thomas Evan Wilson

Bruce W Schober

Daniel C Skinner

Hari Anand Ravi

Aaron Willey

H Md Shuaeb Fazeel

Bruce Schober

Various embodiments provide for active suppression circuitry. The active suppression circuitry can be used with a circuit for a memory system, such as a dual data rate (DDR) memory system. For example, some embodiments provide an active suppression integrated circuit. The active suppression integrated circuit can be used by a memory system to efficiently suppress power supply noise caused by resonance of a power delivery network (PDN) of the memory system, thereby improving power integrity of the memory system input/output.

Active suppression circuitry

A memory channel including an internal clock circuit is disclosed. The clock circuit may synthesize an internal clock signal for use by one or more components of the memory channel. The internal clock signal may have a different frequency than an external clock frequency. The memory channel may include multiple clock circuits that generate multiple internal clock signals. Each portion of the memory channel associated with a different clock circuit may be phase and/or frequency independent of the other portions of the memory channel. The clock circuit may synthesize an internal clock signal based on an external clock signal. The clock circuit may use encoded timing data from an encoded I/O scheme to align the phase of the internal clock signal to a data signal.

Frequency synthesis for memory input-output operations

Embodiments described herein relate to circuits and techniques for interfacing a microprocessor with memory devices, particularly memory devices such as DDR SDRAM in accordance with protocols such as DDR4 and DDR5. Some embodiments particularly relate to a receiver architecture for a DDR memory interface device that provides AC coupling to memory and includes auto-zeroing functionality. These and other embodiments incorporate equalization functionality such as decision feedback equalization and continuous time linear equalization.

Auto-zeroing receiver for memory interface devices

Apparatuses and methods for asymmetric input output interfaces for memory are disclosed. An example apparatus may include a receiver and a transmitter. The receiver may be configured to receive first data signals having a first voltage swing and having a first slew rate. The transmitter may be configured to provide second data signals having a second voltage swing and having a second slew rate, wherein the first and second voltage swings are different, and wherein the first and second slew rates are different.

Apparatuses and methods for asymmetric input/output interface for a memory

Apparatuses and methods for asymmetric input/output interfaces for memory are disclosed. An example apparatus may include a receiver and a transmitter. The receiver may be configured to receive first data signals having a first voltage swing and having a first slew rate. The transmitter may be configured to provide second data signals having a second voltage swing and having a second slew rate, wherein the first and second voltage swings are different, and wherein the first and second slew rates are different.

A device including an input configured to receive an input signal in an operational mode and to receive a reference voltage in a calibration mode is provided. The device includes a capacitor to store a reference charge based on the reference voltage and an input inverter to capture a transition of the input signal. The input inverter is coupled in series with the capacitor so that the transition of the input signal occurs when a voltage of the input signal crosses the reference voltage. The device includes an output inverter coupled in series with the input inverter to provide an output signal having a parity of the input signal. A system including the above device, and a method for calibrating the above device, are also provided.

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Boise, ID, United States of America

Moo Sung Chae